Yield of Ozone in the Pulse Radiolysis of Gaseous Oxygen at Very High Dose Rate. Use of This System as a Dosimeter

1969 ◽  
Vol 50 (1) ◽  
pp. 419-423 ◽  
Author(s):  
J. A. Ghormley ◽  
C. J. Hochanadel ◽  
J. W. Boyle
Keyword(s):  
Dose Rate ◽  
Pulse Radiolysis ◽  
High Dose Rate ◽  
High Dose ◽  
Gaseous Oxygen ◽  
Very High

scholarly journals Enhancing radiosensitivity of melanoma cells through very high dose rate pulses released by a plasma focus device

PLoS ONE ◽  
2018 ◽  
Vol 13 (6) ◽  
pp. e0199312 ◽  
Author(s):  
Francesca Buontempo ◽  
Ester Orsini ◽  
Isabella Zironi ◽  
Lorenzo Isolan ◽  
Alessandra Cappellini ◽  
...  
Keyword(s):  
Dose Rate ◽  
Plasma Focus ◽  
Melanoma Cells ◽  
High Dose Rate ◽  
Plasma Focus Device ◽  
High Dose ◽  
Very High

Primary yields and mechanism in the radiolysis of gaseous ammonia

1969 ◽  
Vol 47 (16) ◽  
pp. 3007-3016 ◽  
Author(s):  
C. Willis ◽  
A. W. Boyd ◽  
O. A. Miller
Keyword(s):  
Dose Rate ◽  
Rate Constant ◽  
High Dose Rate ◽  
Radical Reactions ◽  
Gaseous Ammonia ◽  
High Dose ◽  
Ammonia Vapor ◽  
Radical Product ◽  
Very High

Ammonia vapor has been irradiated with single pulses of electrons at a very high dose rate (1027 eV g−1 s−1) with a Febetron 705. At this dose rate radical–product reactions are not significant. In pure ammonia, hydrogen, nitrogen, and hydrazine are produced and the yields found at 1027 eV g−1 s−1 are: G(H2) = 3.58 ± 0.08; G(N2) = 1.00 ± 0.05; G(N2H4) = 0.58 ± 0.05. The yields are independent of pressure from 1 to 5 atm and of temperature between 20 and 200 °C. Above 250 °C the yields of all three products increase significantly and this is due to reaction [1] competing with radical–radical reactions.[Formula: see text]A rate constant for this reaction has been determined,[Formula: see text]Product yields have been measured for ammonia–propene mixtures. These yields have allowed determination of the primary radiation yields GNH = 0.74; [Formula: see text]; GH = 4.8; and G(−NH3) = 5.4.

ChemInform Abstract: VERY-HIGH-DOSE-RATE RADIOLYSIS OF N-BUTANE IN THE GAS PHASE, THE EFFECT OF THE ADDITION OF ELECTRON SCAVENGERS

1974 ◽  
Vol 5 (22) ◽  
Author(s):  
YOSHIHIKO HATANO ◽  
SATOSHI TAKAO ◽  
HIDEKI NAMBA ◽  
TAKUMI UENO ◽  
SHOJI SHIDA
Keyword(s):  
Dose Rate ◽  
Gas Phase ◽  
High Dose Rate ◽  
High Dose ◽  
Very High

Radiobiological characterization of the very high dose rate and dose per pulse electron beams produced by an IORT (intra operative radiation therapy) dedicated linac

2017 ◽  
Vol 6 (S5) ◽  
pp. S761-S768 ◽  
Author(s):  
Paola Scampoli ◽  
Carmela Carpentieri ◽  
Marco Giannelli ◽  
Vera Magaddino ◽  
Lorenzo Manti ◽  
...  
Keyword(s):  
Radiation Therapy ◽  
Dose Rate ◽  
Electron Beams ◽  
High Dose Rate ◽  
High Dose ◽  
Pulse Electron ◽  
Very High

scholarly journals Very-high-dose-rate Radiolysis ofn-Butane in the Gas Phase. The Effect of the Addition of Electron Scavengers

1974 ◽  
Vol 47 (3) ◽  
pp. 741-742 ◽  
Author(s):  
Yoshihiko Hatano ◽  
Satoshi Takao ◽  
Hideki Namba ◽  
Takumi Ueno ◽  
Shoji Shida
Keyword(s):  
Dose Rate ◽  
Gas Phase ◽  
High Dose Rate ◽  
High Dose ◽  
Very High

High Dose Rate Oxygen Implantation for Formation of Silicon-on-Insulator Structures

1990 ◽  
Vol 201 ◽  
Author(s):  
E. Cortesi ◽  
F. Namavar ◽  
R. F. Pinizzotto ◽  
H. Yang
Keyword(s):  
Dose Rate ◽  
Silicon Surface ◽  
High Dose Rate ◽  
Silicon On Insulator ◽  
High Dose ◽  
Surface Oxide Layer ◽  
Dose Rates ◽  
Pit Formation ◽  
Lower Dose Rate ◽  
Very High

AbstractWe have studied Separation by IMplantation of OXygen (SIMOX) processes using very high dose rates (40–60 μA/cm2). For a dose of 4 × 1017 O+/cm2 at 160 keV, the structure formed by implantation at 50 μA/cm2 is very similar to that associated with lower dose rates. The same dose implanted at a dose rate of 60 μA/cm2, however, results in the formation of pits in the silicon surface as well as a somewhat different oxide structure. Implantation through a surface oxide layer appears to result in a structure similar to that associated with lower dose rate implantation. These and higher dose samples suggest that the threshold for pit formation is related to both dose rate and dose.

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