High-current-density thin-film silicon diodes grown at low temperature

2004 ◽  
Vol 85 (11) ◽  
pp. 2122-2124 ◽  
Author(s):  
Qi Wang ◽  
Scott Ward ◽  
Anna Duda ◽  
Jian Hu ◽  
Paul Stradins ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Current Density ◽  
High Current Density ◽  
High Current ◽  
Thin Film Silicon

Low Temperature Thin-film Silicon Diodes for Consumer Electronics

2005 ◽  
Vol 862 ◽  
Author(s):  
Qi Wang ◽  
Scott Ward ◽  
Anna Duda ◽  
Jian Hua ◽  
Paul Stradins ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Current Density ◽  
Voltage Drop ◽  
High Current Density ◽  
Consumer Electronics ◽  
High Current ◽  
Plastic Substrates ◽  
Forward Current ◽  
Thin Film Silicon

AbstractWe have developed high current density thin-film silicon n-i-p diodes for low cost and low temperature two-dimensional diode-logic memory array applications. The diodes are fabricated at temperatures below 250°C on glass, stainless steel, and plastic substrates using hot-wire chemical vapor deposition (CVD). The 0.01-mm2 standalone diodes have a forward current-density (J) of near 10 kA/cm2 and a rectification ratio over 107 at ±2 V. The 25 μm2 array diodes have J > 104 A/cm2 and rectification of 105 at ±2V. On plastic substrates, we have also used plasma-enhanced CVD to deposit 10-μm diameter diodes with J ˜ 5 x 104 A/cm2. We found that the use of microcrystalline silicon (μc-Si) i- and nlayers results in higher current-density diodes than with amorphous silicon. Reducing the diode area increases the forward current density by lowering the voltage drop across the external series resistances. A prototype diode array memory based on 10-micron devices was successfully demonstrated by monolithically integrating diodes with a-Si:H switching elements. High current density diodes have potential applications in a variety of large area, thin-film electronic devices, in addition to a-Si:H-based memory. This could widen the application of thin-film silicon beyond its present industrial applications in thin-film transistors, solar cells, bolometers and photo-detectors.

High Current Density Effect on In-situ Atomic Migration Characteristics of a BiTe Thin Film System

2013 ◽  
Vol 52 (10S) ◽  
pp. 10MC06
Author(s):  
Seunghyun Kim ◽  
Yong-Jin Park ◽  
Young-Chang Joo ◽  
Young-Bae Park
Keyword(s):  
Thin Film ◽  
Current Density ◽  
High Current Density ◽  
Density Effect ◽  
Film System ◽  
High Current ◽  
Thin Film System

Failure of Small Thin Film Conductors Due to High Current-Density Pulses

1978 ◽  
Author(s):  
E. Kinsbron ◽  
C. M. Melliar-Smith ◽  
A. T. English ◽  
T. Chynoweth
Keyword(s):  
Thin Film ◽  
Current Density ◽  
High Current Density ◽  
High Current

Failure of small thin-film conductors due to high current-density pulses

1979 ◽  
Vol 26 (1) ◽  
pp. 22-26 ◽  
Author(s):  
E. Kinsbron ◽  
C.M. Melliar-Smith ◽  
A.T. English
Keyword(s):  
Thin Film ◽  
Current Density ◽  
High Current Density ◽  
High Current

Low-Temperature Hydrothermal Synthesis and Electrochemical Properties of Birnessit-Type Manganese Dioxide Nanosheets

2013 ◽  
Vol 800 ◽  
pp. 393-397 ◽  
Author(s):  
De Yan ◽  
Ying Liu ◽  
Zhi Guo Wu ◽  
Ren Fu Zhuo ◽  
Jun Wang
Keyword(s):  
Low Temperature ◽  
Current Density ◽  
High Current Density ◽  
Hydrothermal Process ◽  
Rate Capability ◽  
High Specific Capacitance ◽  
High Current ◽  
Cycle Stability ◽  
Good Rate Capability ◽  
A Current

Birnessite MnO2 nanosheets were synthesized by self-limiting deposition of KMnO4 in a facile low-temperature hydrothermal process. The MnO2 electrode exhibits a high specific capacitance of 169 F g-1 at a current density of 0.1 A g-1, good rate capability with a capacitance of 96 F g-1 even at a high current density of 5 A g-1, as well as excellent cycle stability with capacitance retention of 94% at 1 A g-1 after 1,000 cycles.

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