High Current Density Effect on In-situ Atomic Migration Characteristics of a BiTe Thin Film System

2013 ◽  
Vol 52 (10S) ◽  
pp. 10MC06
Author(s):  
Seunghyun Kim ◽  
Yong-Jin Park ◽  
Young-Chang Joo ◽  
Young-Bae Park
Keyword(s):  
Thin Film ◽  
Current Density ◽  
High Current Density ◽  
Density Effect ◽  
Film System ◽  
High Current ◽  
Thin Film System

VS2 Microflowers with In Situ Embedded Few-Layer MoS2 Nanobelts for Enhanced Hydrogen Evolution Reaction at High Current Density

2020 ◽  
Vol 167 (2) ◽  
pp. 026508
Author(s):  
Rui Xu ◽  
Jianfeng Huang ◽  
Liyun Cao ◽  
Li Feng ◽  
Yongqiang Feng ◽  
...  
Keyword(s):  
Hydrogen Evolution ◽  
Hydrogen Evolution Reaction ◽  
Current Density ◽  
High Current Density ◽  
High Current

In Situ Growth of Ru Nanoparticles on (Fe,Ni)(OH) 2 to Boost Hydrogen Evolution Activity at High Current Density in Alkaline Media

Small Methods ◽  
2020 ◽  
Vol 4 (6) ◽  
pp. 1900796 ◽  
Author(s):  
Xin Xiao ◽  
Xikui Wang ◽  
Xingxing Jiang ◽  
Shaowei Song ◽  
Dekang Huang ◽  
...  
Keyword(s):  
Hydrogen Evolution ◽  
Current Density ◽  
High Current Density ◽  
Alkaline Media ◽  
In Situ Growth ◽  
High Current ◽  
Ru Nanoparticles

Failure of Small Thin Film Conductors Due to High Current-Density Pulses

1978 ◽  
Author(s):  
E. Kinsbron ◽  
C. M. Melliar-Smith ◽  
A. T. English ◽  
T. Chynoweth
Keyword(s):  
Thin Film ◽  
Current Density ◽  
High Current Density ◽  
High Current

Low Temperature Thin-film Silicon Diodes for Consumer Electronics

2005 ◽  
Vol 862 ◽  
Author(s):  
Qi Wang ◽  
Scott Ward ◽  
Anna Duda ◽  
Jian Hua ◽  
Paul Stradins ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Current Density ◽  
Voltage Drop ◽  
High Current Density ◽  
Consumer Electronics ◽  
High Current ◽  
Plastic Substrates ◽  
Forward Current ◽  
Thin Film Silicon

AbstractWe have developed high current density thin-film silicon n-i-p diodes for low cost and low temperature two-dimensional diode-logic memory array applications. The diodes are fabricated at temperatures below 250°C on glass, stainless steel, and plastic substrates using hot-wire chemical vapor deposition (CVD). The 0.01-mm2 standalone diodes have a forward current-density (J) of near 10 kA/cm2 and a rectification ratio over 107 at ±2 V. The 25 μm2 array diodes have J > 104 A/cm2 and rectification of 105 at ±2V. On plastic substrates, we have also used plasma-enhanced CVD to deposit 10-μm diameter diodes with J ˜ 5 x 104 A/cm2. We found that the use of microcrystalline silicon (μc-Si) i- and nlayers results in higher current-density diodes than with amorphous silicon. Reducing the diode area increases the forward current density by lowering the voltage drop across the external series resistances. A prototype diode array memory based on 10-micron devices was successfully demonstrated by monolithically integrating diodes with a-Si:H switching elements. High current density diodes have potential applications in a variety of large area, thin-film electronic devices, in addition to a-Si:H-based memory. This could widen the application of thin-film silicon beyond its present industrial applications in thin-film transistors, solar cells, bolometers and photo-detectors.

Failure of small thin-film conductors due to high current-density pulses

1979 ◽  
Vol 26 (1) ◽  
pp. 22-26 ◽  
Author(s):  
E. Kinsbron ◽  
C.M. Melliar-Smith ◽  
A.T. English
Keyword(s):  
Thin Film ◽  
Current Density ◽  
High Current Density ◽  
High Current
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