Field emission properties of self-assembled silicon nanostructures on n- and p-type silicon

2004 ◽  
Vol 85 (15) ◽  
pp. 3277-3279 ◽  
Author(s):  
S. Johnson ◽  
A. Markwitz ◽  
M. Rudolphi ◽  
H. Baumann ◽  
S. P. Oei ◽  
...  
Keyword(s):  
Field Emission ◽  
Silicon Nanostructures ◽  
Emission Properties ◽  
Field Emission Properties ◽  
Type Silicon ◽  
Self Assembled ◽  
P Type

Field emission properties of p-type silicon tips decorated with tungsten nanoparticles

2017 ◽  
Author(s):  
Victor Kleshch ◽  
Pavel Serbun ◽  
Anton Orekhov ◽  
Dirk Lutzenkirchen-Hecht ◽  
Alexander Obraztsov ◽  
...  
Keyword(s):  
Field Emission ◽  
Emission Properties ◽  
Field Emission Properties ◽  
Type Silicon ◽  
P Type ◽  
Tungsten Nanoparticles

Field emission properties of self-assembled silicon nanostructures formed by electron beam annealing

2006 ◽  
Vol 6 (3) ◽  
pp. 503-506 ◽  
Author(s):  
S. Johnson ◽  
A. Markwitz ◽  
M. Rudolphi ◽  
H. Baumann ◽  
S.P. Oei ◽  
...  
Keyword(s):  
Electron Beam ◽  
Field Emission ◽  
Silicon Nanostructures ◽  
Emission Properties ◽  
Field Emission Properties ◽  
Self Assembled

scholarly journals Туннельная эмиссия электронов из наноструктурированных кремниевых катодных матриц с фтор-углеродным покрытием

2019 ◽  
Vol 89 (6) ◽  
pp. 952
Author(s):  
Р.К. Яфаров
Keyword(s):  
Field Emission ◽  
Electric Fields ◽  
Silicon Surface ◽  
Silicon Wafers ◽  
Emission Properties ◽  
Field Emission Properties ◽  
Physicochemical Models ◽  
Surface Modified ◽  
P Type ◽  
Carbon Plasma

AbstractVariations of the morphology and field-emission properties of surface-structured n - and p -type silicon wafers have been studied. The silicon surface has been structured by etching in a fluorine–carbon plasma and depositing subnanodimensional island carbon masks. It has been shown that surface structuring in a fluorine–carbon plasma makes it possible to reach desired field-emission currents in electric fields of different strengths. Physicochemical models of field emission mechanisms and models of destruction of surface-modified multipoint silicon array cathodes have been considered.

Field emission properties of p-type black silicon on pillar structures

2016 ◽  
Vol 34 (2) ◽  
pp. 02G107 ◽  
Author(s):  
Christoph Langer ◽  
Christian Prommesberger ◽  
Robert Ławrowski ◽  
Rupert Schreiner ◽  
Pavel Serbun ◽  
...  
Keyword(s):  
Field Emission ◽  
Black Silicon ◽  
Emission Properties ◽  
Field Emission Properties ◽  
P Type

Field emission properties of carbon nanosphere chain arrays self-assembled on porous alumina templates

2007 ◽  
Author(s):  
M. Cahay ◽  
K. Garre ◽  
J. W. Fraser ◽  
D. J. Lockwood ◽  
V. Semet ◽  
...  
Keyword(s):  
Field Emission ◽  
Porous Alumina ◽  
Emission Properties ◽  
Field Emission Properties ◽  
Self Assembled

Self-assembled growth of multi-layer graphene on planar and nano-structured substrates and its field emission properties

Nanoscale ◽  
2013 ◽  
Vol 5 (24) ◽  
pp. 12388 ◽  
Author(s):  
Jian-Hua Deng ◽  
Bin Yu ◽  
Guo-Zheng Li ◽  
Xing-Gang Hou ◽  
Meng-Li Zhao ◽  
...  
Keyword(s):  
Field Emission ◽  
Emission Properties ◽  
Field Emission Properties ◽  
Layer Graphene ◽  
Self Assembled

Field-emission properties of self-assembled Si-capped Ge quantum dots

2006 ◽  
Vol 508 (1-2) ◽  
pp. 218-221 ◽  
Author(s):  
S.W. Lee ◽  
Y.L. Chueh ◽  
H.C. Chen ◽  
L.J. Chen ◽  
P.S. Chen ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Field Emission ◽  
Emission Properties ◽  
Field Emission Properties ◽  
Ge Quantum Dots ◽  
Self Assembled

scholarly journals Field Emission Properties from p-Type GaAs Emitter Fabricated by Wet Etching Process.

Shinku ◽  
2002 ◽  
Vol 45 (9) ◽  
pp. 706-709
Author(s):  
Tomomi YOSHIMOTO ◽  
Dai KAMIMARU ◽  
Satoru KIKUCHI ◽  
Naohiro YOKOGAWA ◽  
Tatsuo IWATA
Keyword(s):  
Field Emission ◽  
Wet Etching ◽  
Etching Process ◽  
Emission Properties ◽  
Field Emission Properties ◽  
P Type
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