scholarly journals Туннельная эмиссия электронов из наноструктурированных кремниевых катодных матриц с фтор-углеродным покрытием

2019 ◽  
Vol 89 (6) ◽  
pp. 952
Author(s):  
Р.К. Яфаров
Keyword(s):  
Field Emission ◽  
Electric Fields ◽  
Silicon Surface ◽  
Silicon Wafers ◽  
Emission Properties ◽  
Field Emission Properties ◽  
Physicochemical Models ◽  
Surface Modified ◽  
P Type ◽  
Carbon Plasma

AbstractVariations of the morphology and field-emission properties of surface-structured n - and p -type silicon wafers have been studied. The silicon surface has been structured by etching in a fluorine–carbon plasma and depositing subnanodimensional island carbon masks. It has been shown that surface structuring in a fluorine–carbon plasma makes it possible to reach desired field-emission currents in electric fields of different strengths. Physicochemical models of field emission mechanisms and models of destruction of surface-modified multipoint silicon array cathodes have been considered.

The Field Emission of Globe-Like Diamond Microcrystalline Aggregate Films

2011 ◽  
Vol 279 ◽  
pp. 88-92
Author(s):  
Jin Hai Gao ◽  
Wu Qing Zhang ◽  
Zhen Li
Keyword(s):  
Field Emission ◽  
Electric Fields ◽  
Current Density ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Method ◽  
Emission Properties ◽  
Plasma Chemical Vapor Deposition ◽  
Field Emission Properties ◽  
Turn On

The globe-like diamond microcrystalline aggregates films were fabricated by microwave plasma chemical vapor deposition method. The field emission properties and emission stability of the films were tested using a diode structure in vacuum. It was found that the globe-like diamond microcrystalline aggregates films exhibited good electron emission properties and stability. The turn-on field of 0. 55 V /μm and the current density of 11mA/cm2 at the electric fields of 2.73V/μm were obtained. At the successive operator circles, the turn-on field tends to stabilize at 1. 08V /μm and the current density of 6.6 mA/cm2 is obtained.

Field emission properties of the caterpillar-like structural carbon film grown by magnetic and electric fields coupling HFCVD

2017 ◽  
Vol 423 ◽  
pp. 788-792 ◽  
Author(s):  
Yijia Wang ◽  
Qiuping Wei ◽  
Zhiming Yu ◽  
Hangyu Long ◽  
Zejun Deng ◽  
...  
Keyword(s):  
Field Emission ◽  
Electric Fields ◽  
Carbon Film ◽  
Emission Properties ◽  
Field Emission Properties ◽  
Structural Carbon

Field emission properties of p-type silicon tips decorated with tungsten nanoparticles

2017 ◽  
Author(s):  
Victor Kleshch ◽  
Pavel Serbun ◽  
Anton Orekhov ◽  
Dirk Lutzenkirchen-Hecht ◽  
Alexander Obraztsov ◽  
...  
Keyword(s):  
Field Emission ◽  
Emission Properties ◽  
Field Emission Properties ◽  
Type Silicon ◽  
P Type ◽  
Tungsten Nanoparticles

Field emission properties of p-type black silicon on pillar structures

2016 ◽  
Vol 34 (2) ◽  
pp. 02G107 ◽  
Author(s):  
Christoph Langer ◽  
Christian Prommesberger ◽  
Robert Ławrowski ◽  
Rupert Schreiner ◽  
Pavel Serbun ◽  
...  
Keyword(s):  
Field Emission ◽  
Black Silicon ◽  
Emission Properties ◽  
Field Emission Properties ◽  
P Type

Enhanced field emission properties from surface-modified 2D Cd(OH)2 nanocoins

2017 ◽  
Vol 123 (2) ◽  
Author(s):  
Vivekanand S. Bagal ◽  
Girish P. Patil ◽  
Amol B. Deore ◽  
Prashant K. Baviskar ◽  
Dhammanand J. Shirale ◽  
...  
Keyword(s):  
Field Emission ◽  
Emission Properties ◽  
Field Emission Properties ◽  
Surface Modified

Field emission properties of self-assembled silicon nanostructures on n- and p-type silicon

2004 ◽  
Vol 85 (15) ◽  
pp. 3277-3279 ◽  
Author(s):  
S. Johnson ◽  
A. Markwitz ◽  
M. Rudolphi ◽  
H. Baumann ◽  
S. P. Oei ◽  
...  
Keyword(s):  
Field Emission ◽  
Silicon Nanostructures ◽  
Emission Properties ◽  
Field Emission Properties ◽  
Type Silicon ◽  
Self Assembled ◽  
P Type

scholarly journals Field Emission Properties from p-Type GaAs Emitter Fabricated by Wet Etching Process.

Shinku ◽  
2002 ◽  
Vol 45 (9) ◽  
pp. 706-709
Author(s):  
Tomomi YOSHIMOTO ◽  
Dai KAMIMARU ◽  
Satoru KIKUCHI ◽  
Naohiro YOKOGAWA ◽  
Tatsuo IWATA
Keyword(s):  
Field Emission ◽  
Wet Etching ◽  
Etching Process ◽  
Emission Properties ◽  
Field Emission Properties ◽  
P Type

Electron Field Emission Properties of Diamond

1995 ◽  
Vol 416 ◽  
Author(s):  
W. Zhu ◽  
G. P. Kochanski ◽  
S. Jin
Keyword(s):  
Field Emission ◽  
Electric Fields ◽  
Chemical Vapor ◽  
Electron Field Emission ◽  
Emission Data ◽  
Emission Properties ◽  
Field Emission Properties ◽  
Ultrafine Diamond ◽  
Electron Field ◽  
Electron Field Emission Properties

ABSTRACTWe have developed both experimental and numerical methods to collect and analyze field emission data from diamond samples. The diamond emitters are either films prepared by low pressure chemical vapor deposition (CVD) or powders synthesized by traditional high pressure high temperature (HPHT) processes. We established a strong correlation between the electric field required for emission and the defect densities in undoped or p-type doped diamond. We further found that ultrafine diamond particulate emitters offer substantially enhanced electron field emission properties at low electric fields compared to CVD diamond emitters. When subject to appropriate processing schemes, the particulate diamond emitters exhibit extremely low emission fields, typically 1-5 V/μm for a current density of 10 mA/cm2. These are believed to be the lowest-voltage field emitters ever reported.

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