scholarly journals Field Emission Properties from p-Type GaAs Emitter Fabricated by Wet Etching Process.

Shinku ◽  
2002 ◽  
Vol 45 (9) ◽  
pp. 706-709
Author(s):  
Tomomi YOSHIMOTO ◽  
Dai KAMIMARU ◽  
Satoru KIKUCHI ◽  
Naohiro YOKOGAWA ◽  
Tatsuo IWATA
2019 ◽  
Vol 89 (6) ◽  
pp. 952
Author(s):  
Р.К. Яфаров

AbstractVariations of the morphology and field-emission properties of surface-structured n - and p -type silicon wafers have been studied. The silicon surface has been structured by etching in a fluorine–carbon plasma and depositing subnanodimensional island carbon masks. It has been shown that surface structuring in a fluorine–carbon plasma makes it possible to reach desired field-emission currents in electric fields of different strengths. Physicochemical models of field emission mechanisms and models of destruction of surface-modified multipoint silicon array cathodes have been considered.


Author(s):  
Victor Kleshch ◽  
Pavel Serbun ◽  
Anton Orekhov ◽  
Dirk Lutzenkirchen-Hecht ◽  
Alexander Obraztsov ◽  
...  

Author(s):  
Christoph Langer ◽  
Christian Prommesberger ◽  
Robert Ławrowski ◽  
Rupert Schreiner ◽  
Pavel Serbun ◽  
...  

2004 ◽  
Vol 85 (15) ◽  
pp. 3277-3279 ◽  
Author(s):  
S. Johnson ◽  
A. Markwitz ◽  
M. Rudolphi ◽  
H. Baumann ◽  
S. P. Oei ◽  
...  

2013 ◽  
Vol 9 (5) ◽  
pp. 619-623 ◽  
Author(s):  
Shama Parveen ◽  
Samina Husain ◽  
Avshish Kumar ◽  
Javid Ali ◽  
Mubashshir Husain ◽  
...  

2006 ◽  
Vol 14 (2-3) ◽  
pp. 151-164 ◽  
Author(s):  
A. V. Okotrub ◽  
L. G. Bulusheva ◽  
V. V. Belavin ◽  
A. G. Kudashov ◽  
A. V. Gusel'nikov ◽  
...  

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