Influence of AlN buffer layer thickness on material and electrical properties of InAlN/GaN high-electron-mobility transistors

2015 ◽  
Vol 54 (7) ◽  
pp. 071001 ◽  
Author(s):  
Wei-Ching Huang ◽  
Kuan-Shin Liu ◽  
Yuen-Yee Wong ◽  
Chi-Feng Hsieh ◽  
Edward-Yi Chang ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Buffer Layer ◽  
Layer Thickness ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Buffer Layer Thickness ◽  
Aln Buffer

Electron density and currents of AlN/GaN high electron mobility transistors with thin GaN/AlN buffer layer

2014 ◽  
Vol 105 (11) ◽  
pp. 113508 ◽  
Author(s):  
A. Bairamis ◽  
Ch. Zervos ◽  
A. Adikimenakis ◽  
A. Kostopoulos ◽  
M. Kayambaki ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Electron Density ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Aln Buffer

Undoped High-Resistance GaN Buffer Layer for AlGaN/GaN High-Electron-Mobility Transistors

2019 ◽  
Vol 45 (8) ◽  
pp. 761-764
Author(s):  
T. V. Malin ◽  
D. S. Milakhin ◽  
I. A. Aleksandrov ◽  
V. E. Zemlyakov ◽  
V. I. Egorkin ◽  
...  
Keyword(s):  
Buffer Layer ◽  
High Resistance ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Gan Buffer Layer

Dependence of ohmic contact properties on AlGaN layer thickness for AlGaN/GaN high-electron-mobility transistors

2016 ◽  
Vol 55 (4) ◽  
pp. 040306 ◽  
Author(s):  
Yusuke Takei ◽  
Kazuo Tsutsui ◽  
Wataru Saito ◽  
Kuniyuki Kakushima ◽  
Hitoshi Wakabayashi ◽  
...  
Keyword(s):  
Layer Thickness ◽  
Ohmic Contact ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Algan Layer ◽  
High Electron Mobility ◽  
Electron Mobility Transistors
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