Undoped High-Resistance GaN Buffer Layer for AlGaN/GaN High-Electron-Mobility Transistors

Technical Physics Letters ◽

10.1134/s1063785019080108 ◽

2019 ◽

Vol 45 (8) ◽

pp. 761-764

Author(s):

T. V. Malin ◽

D. S. Milakhin ◽

I. A. Aleksandrov ◽

V. E. Zemlyakov ◽

V. I. Egorkin ◽

...

Keyword(s):

Buffer Layer ◽

High Resistance ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Gan Buffer Layer

Download Full-text

Probing temperature gradients within the GaN buffer layer of AlGaN/GaN high electron mobility transistors with Raman thermography

Journal of Applied Physics ◽

10.1063/1.4865296 ◽

2014 ◽

Vol 115 (6) ◽

pp. 064504 ◽

Author(s):

C. Hodges ◽

J. Pomeroy ◽

M. Kuball

Keyword(s):

Buffer Layer ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Temperature Gradients ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Gan Buffer Layer

Download Full-text

Study of the Effects of GaN Buffer Layer Quality on the dc Characteristics of AlGaN/GaN High Electron Mobility Transistors

ECS Meeting Abstracts ◽

10.1149/ma2015-02/33/1217 ◽

2015 ◽

Keyword(s):

Buffer Layer ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Dc Characteristics ◽

Gan Buffer Layer

Download Full-text

Study of the effects of GaN buffer layer quality on the dc characteristics of AlGaN/GaN high electron mobility transistors

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.4918715 ◽

2015 ◽

Vol 33 (3) ◽

pp. 031210 ◽

Author(s):

Shihyun Ahn ◽

Weidi Zhu ◽

Chen Dong ◽

Lingcong Le ◽

Ya-Hsi Hwang ◽

...

Keyword(s):

Buffer Layer ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Dc Characteristics ◽

Gan Buffer Layer

Download Full-text

AlGaN/GaN high-electron-mobility transistors on sapphire with Fe-doped GaN buffer layer by MOVPE

physica status solidi (c) ◽

10.1002/pssc.200565152 ◽

2006 ◽

Vol 3 (6) ◽

pp. 2373-2376 ◽

Author(s):

T. Aggerstam ◽

M. Sjödin ◽

S. Lourdudoss

Keyword(s):

Buffer Layer ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Gan Buffer Layer

Download Full-text

Mg-compensation effect in GaN buffer layer for AlGaN/GaN high-electron-mobility transistors grown on 4H-SiC substrate

Japanese Journal of Applied Physics ◽

10.7567/jjap.56.015502 ◽

2016 ◽

Vol 56 (1) ◽

pp. 015502 ◽

Author(s):

Kwangse Ko ◽

Kyeongjae Lee ◽

Byeongchan So ◽

Cheon Heo ◽

Kyungbae Lee ◽

...

Keyword(s):

Buffer Layer ◽

Electron Mobility ◽

Compensation Effect ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Gan Buffer Layer

Download Full-text

Effect of GaN Buffer Layer Growth Pressure on the Device Characteristics of AlGaN/GaN High-Electron-Mobility Transistors on Si

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.121002 ◽

2009 ◽

Vol 48 (12) ◽

pp. 121002 ◽

Author(s):

Josephine Selvaraj ◽

S. Lawrence Selvaraj ◽

Takashi Egawa

Keyword(s):

Buffer Layer ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Layer Growth ◽

High Electron ◽

Growth Pressure ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Gan Buffer Layer

Download Full-text

Study of the Effects of GaN Buffer Layer Quality on the dc Characteristics of AlGaN/GaN High Electron Mobility Transistors

ECS Transactions ◽

10.1149/06914.0103ecst ◽

2015 ◽

Vol 69 (14) ◽

pp. 103-108 ◽

Author(s):

S. Ahn ◽

W. Zhu ◽

C. Dong ◽

Y.-H. Hwang ◽

B.-J. Kim ◽

...

Keyword(s):

Buffer Layer ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Dc Characteristics ◽

Gan Buffer Layer

Download Full-text

Effects of acceptors in a Fe-doped buffer layer on breakdown characteristics of AlGaN/GaN high electron mobility transistors with a high-kpassivation layer

Japanese Journal of Applied Physics ◽

10.7567/jjap.56.108003 ◽

2017 ◽

Vol 56 (10) ◽

pp. 108003 ◽

Author(s):

Yuuki Kawada ◽

Hideyuki Hanawa ◽

Kazushige Horio

Keyword(s):

Buffer Layer ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

Download Full-text

CCl4‐doped semi‐insulating InP as a buffer layer in GaInAs/InP high electron mobility transistors

Applied Physics Letters ◽

10.1063/1.117085 ◽

1996 ◽

Vol 69 (8) ◽

pp. 1143-1144 ◽

Author(s):

C. C. Hsu ◽

Y. F. Yang ◽

H. J. Ou ◽

E. S. Yang

Keyword(s):

Buffer Layer ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

Download Full-text

Enhancement of breakdown voltage by AlN buffer layer thickness in AlGaN∕GaN high-electron-mobility transistors on 4in. diameter silicon

Applied Physics Letters ◽

10.1063/1.1879091 ◽

2005 ◽

Vol 86 (12) ◽

pp. 123503 ◽

Author(s):

S. Arulkumaran ◽

T. Egawa ◽

S. Matsui ◽

H. Ishikawa

Keyword(s):

Buffer Layer ◽

Layer Thickness ◽

Breakdown Voltage ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Buffer Layer Thickness ◽

Download Full-text