scholarly journals Effects of acceptors in a Fe-doped buffer layer on breakdown characteristics of AlGaN/GaN high electron mobility transistors with a high-kpassivation layer

2017 ◽  
Vol 56 (10) ◽  
pp. 108003 ◽  
Author(s):  
Yuuki Kawada ◽  
Hideyuki Hanawa ◽  
Kazushige Horio
Keyword(s):  
Buffer Layer ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

Undoped High-Resistance GaN Buffer Layer for AlGaN/GaN High-Electron-Mobility Transistors

2019 ◽  
Vol 45 (8) ◽  
pp. 761-764
Author(s):  
T. V. Malin ◽  
D. S. Milakhin ◽  
I. A. Aleksandrov ◽  
V. E. Zemlyakov ◽  
V. I. Egorkin ◽  
...  
Keyword(s):  
Buffer Layer ◽  
High Resistance ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Gan Buffer Layer

AlGaN Channel High Electron Mobility Transistors with an Al x Ga 1−x N/GaN Composite Buffer Layer

2015 ◽  
Vol 32 (7) ◽  
pp. 077205 ◽  
Author(s):  
Xiang-Dong Li ◽  
Jin-Cheng Zhang ◽  
Yu Zou ◽  
Xue-Zhi Ma ◽  
Chang Liu ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

Electron density and currents of AlN/GaN high electron mobility transistors with thin GaN/AlN buffer layer

2014 ◽  
Vol 105 (11) ◽  
pp. 113508 ◽  
Author(s):  
A. Bairamis ◽  
Ch. Zervos ◽  
A. Adikimenakis ◽  
A. Kostopoulos ◽  
M. Kayambaki ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Electron Density ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Aln Buffer
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