Enhancement of Breakdown Voltage in AlGaN/GaN High Electron Mobility Transistors Using Double Buried p-Type Layers
2016 ◽
Vol 33
(6)
◽
pp. 067301
◽
2006 ◽
Vol 32
(1-2)
◽
pp. 566-568
◽
2012 ◽
Vol 33
(10)
◽
pp. 1375-1377
◽
2014 ◽
Vol 32
(5)
◽
pp. 051203
◽
2014 ◽
Vol 32
(2)
◽
pp. 021203
◽