Tunneling spectroscopy of metal-oxide-semiconductor field-effect transistor at low temperature

Oxide Semiconductor ◽

Low‐temperature metal‐oxide‐semiconductor field‐effect transistor preamplifier

Review of Scientific Instruments ◽

10.1063/1.1144353 ◽

1993 ◽

Vol 64 (10) ◽

pp. 3024-3025 ◽

Cited By ~ 3

Author(s):

Jim Imai ◽

Ruben Flores

Keyword(s):

Low Temperature ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Oxide Semiconductor ◽

Low-Temperature Behaviors of Phonon-Limited Electron Mobility of Sub-10-nm-Thick Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistor with (001) and (111) Si Surface Channels

10.1143/jjap.48.071204 ◽

2009 ◽

Vol 48 (7) ◽

pp. 071204 ◽

Cited By ~ 2

Author(s):

Yasuhisa Omura ◽

Tsuyoshi Yamamura ◽

Shingo Sato

Keyword(s):

Low Temperature ◽

Metal Oxide ◽

Electron Mobility ◽

Field Effect ◽

Field Effect Transistor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Room Temperature Coulomb Blockade and Low Temperature Hopping Transport in a Multiple-Dot-Channel Metal-Oxide-Semiconductor Field-Effect-Transistor

10.1143/jjap.36.4139 ◽

1997 ◽

Vol 36 (Part 1, No. 6B) ◽

pp. 4139-4142 ◽

Cited By ~ 11

Author(s):

Toshiro Hiramoto ◽

Hiroki Ishikuro ◽

Tomoyuki Fujii ◽

Gen Hashiguchi ◽

Toshiaki Ikoma

Keyword(s):

Low Temperature ◽

Metal Oxide ◽

Coulomb Blockade ◽

Field Effect ◽

Room Temperature ◽

Field Effect Transistor ◽

Oxide Semiconductor ◽

Hopping Transport ◽

Random telegraph signals caused by a single dopant in a metal–oxide–semiconductor field effect transistor at low temperature

AIP Advances ◽

10.1063/5.0009585 ◽

2020 ◽

Vol 10 (5) ◽

pp. 055025 ◽

Cited By ~ 1

Author(s):

Kouta Ibukuro ◽

Joseph William Hillier ◽

Fayong Liu ◽

Muhammad Khaled Husain ◽

Zuo Li ◽

...

Keyword(s):

Low Temperature ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Oxide Semiconductor ◽

Random Telegraph Signals ◽

Low-Temperature Metal-Oxide-Semiconductor Field-Effect Transistor Operation by Temperature Scaling Theory

10.1143/jjap.32.419 ◽

1993 ◽

Vol 32 (Part 1, No. 1B) ◽

pp. 419-422 ◽

Cited By ~ 2

Author(s):

Michio Yokoyama ◽

Tetsuya Hidaka ◽

You-Wen Yi ◽

Kazuya Masu ◽

Kazuo Tsubouchi

Keyword(s):

Low Temperature ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Scaling Theory ◽

Oxide Semiconductor ◽

Temperature Scaling ◽

Role of low temperature rapid thermal annealing in post-laser-annealed p-channel metal-oxide-semiconductor field effect transistor

Applied Physics Letters ◽

10.1063/1.2354446 ◽

2006 ◽

Vol 89 (12) ◽

pp. 122113 ◽

Cited By ~ 4

Author(s):

K. K. Ong ◽

K. L. Pey ◽

P. S. Lee ◽

A. T. S. Wee ◽

X. C. Wang ◽

...

Keyword(s):

Low Temperature ◽

Metal Oxide ◽

Rapid Thermal Annealing ◽

Field Effect ◽

Field Effect Transistor ◽

Temperature Rapid Thermal Annealing

Oxide Semiconductor ◽

Effect Transistor ◽

Low-Temperature Hole Mobility Anomaly in Compensated P-Channel Metal-Oxide-Semiconductor Field-Effect Transistor

10.1143/jjap.34.3413 ◽

1995 ◽

Vol 34 (Part 1, No. 7A) ◽

pp. 3413-3417

Author(s):

Wei-Lee Lu ◽

Jyh-Chyurn Guo ◽

ChinHsinKao ◽

Charles Ching-Hsiang Hsu ◽

LukeSuLu

Keyword(s):

Low Temperature ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Hole Mobility ◽

Oxide Semiconductor ◽

Low-temperature pseudo-metal-oxide-semiconductor field-effect transistor measurements on bare silicon-on-insulator wafers

Applied Physics Letters ◽

10.1063/1.4748984 ◽

2012 ◽

Vol 101 (9) ◽

pp. 092110 ◽

Cited By ~ 2

Author(s):

A. Diab ◽

L. Pirro ◽

I. Ionica ◽

X. Mescot ◽

G. Ghibaudo ◽

...

Keyword(s):

Low Temperature ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Ultimate vertical gate-all-around metal–oxide–semiconductor field-effect transistor and its three-dimensional integrated circuits

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2021.106046 ◽

2021 ◽

Vol 134 ◽

pp. 106046

Author(s):

Shujun Ye ◽

Kikuo Yamabe ◽

Tetsuo Endoh

Keyword(s):

Integrated Circuits ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Three Dimensional ◽

Oxide Semiconductor ◽

A technique to measure spin-dependent trapping events at the metal–oxide–semiconductor field-effect transistor interface: Near zero field spin-dependent charge pumping

Journal of Applied Physics ◽

10.1063/5.0027214 ◽

2020 ◽

Vol 128 (24) ◽

pp. 244501

Author(s):

M. A. Anders ◽

P. M. Lenahan ◽

N. J. Harmon ◽

M. E. Flatté

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Oxide Semiconductor ◽

Zero Field ◽

Charge Pumping ◽