Experimental study on thickness-related electrical characteristics in organic/metal-nanocluster/organic systems

2005 ◽  
Vol 98 (5) ◽  
pp. 054303 ◽  
Author(s):  
Seungmoon Pyo ◽  
Liping Ma ◽  
Jun He ◽  
Qianfei Xu ◽  
Yang Yang ◽  
...  
Keyword(s):  
Experimental Study ◽  
Electrical Characteristics ◽  
Organic Metal ◽  
Organic Systems ◽  
Metal Nanocluster

Nonvolatile electrical bistability of organic/metal-nanocluster/organic system

2003 ◽  
Vol 82 (9) ◽  
pp. 1419-1421 ◽  
Author(s):  
Liping Ma ◽  
Seungmoon Pyo ◽  
Jianyong Ouyang ◽  
Qianfei Xu ◽  
Yang Yang
Keyword(s):  
Organic Metal ◽  
Organic System ◽  
Electrical Bistability ◽  
Metal Nanocluster

Metal nanocluster formation in silica films prepared by rf-sputtering: an experimental study

2002 ◽  
Vol 25 (1) ◽  
pp. 11-17 ◽  
Author(s):  
S. Padovani ◽  
F. D'Acapito ◽  
E. Cattaruzza ◽  
A. De Lorenzi ◽  
F. Gonella ◽  
...  
Keyword(s):  
Experimental Study ◽  
Rf Sputtering ◽  
Silica Films ◽  
Metal Nanocluster

Experimental study on electrical characteristics of gassy coal during extrusion process in different stage

2019 ◽  
Vol 12 (14) ◽  
Author(s):  
Peng Chen ◽  
Tao Yang ◽  
Xuexi Chen ◽  
Yongjie Liu ◽  
Xuelong Li ◽  
...  
Keyword(s):  
Experimental Study ◽  
Extrusion Process ◽  
Electrical Characteristics

Electrical Characteristics of SiC UV-Photodetector Device from the P-I-N Structure Behaviour to the Junction Barrier Schottky Structure Behaviour

2012 ◽  
Vol 711 ◽  
pp. 114-117 ◽  
Author(s):  
Stéphane Biondo ◽  
Mihai Lazar ◽  
Laurent Ottaviani ◽  
Wilfried Vervisch ◽  
Olivier Palais ◽  
...  
Keyword(s):  
Experimental Study ◽  
Forward Bias ◽  
Ultra Violet ◽  
Experimental Measurements ◽  
Electrical Characteristics ◽  
Metallic Contact ◽  
Uv Photodetector ◽  
Sims Analysis ◽  
Schottky Structure ◽  
Photodetector Device

In this paper, we deal with the study of Ultra Violet (UV) photodetector device based on SiC material undergoing a p-i-n structure process. Current density-voltage (J-V) measurements in reverse and forward bias, are performed on the UV photodetector device. Due to a very thin p+-type doping layer, a high reactivation annealing and the metallic contact deposit, experimental measurements point out Junction Barrier Schottky (JBS) device behaviour in spite of the p-i-n structure device process. To understand this involuntary phenomenon, these experimental characteristics are accompanied with an experimental study by the SIMS analysis.

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