Electrical Characteristics of SiC UV-Photodetector Device from the P-I-N Structure Behaviour to the Junction Barrier Schottky Structure Behaviour

2012 ◽  
Vol 711 ◽  
pp. 114-117 ◽  
Author(s):  
Stéphane Biondo ◽  
Mihai Lazar ◽  
Laurent Ottaviani ◽  
Wilfried Vervisch ◽  
Olivier Palais ◽  
...  
Keyword(s):  
Experimental Study ◽  
Forward Bias ◽  
Ultra Violet ◽  
Experimental Measurements ◽  
Electrical Characteristics ◽  
Metallic Contact ◽  
Uv Photodetector ◽  
Sims Analysis ◽  
Schottky Structure ◽  
Photodetector Device

In this paper, we deal with the study of Ultra Violet (UV) photodetector device based on SiC material undergoing a p-i-n structure process. Current density-voltage (J-V) measurements in reverse and forward bias, are performed on the UV photodetector device. Due to a very thin p+-type doping layer, a high reactivation annealing and the metallic contact deposit, experimental measurements point out Junction Barrier Schottky (JBS) device behaviour in spite of the p-i-n structure device process. To understand this involuntary phenomenon, these experimental characteristics are accompanied with an experimental study by the SIMS analysis.

scholarly journals Numerical and experimental study of the dynamic factor of the dynamic load on the urban railway

2020 ◽  
Vol 29 (1) ◽  
pp. 195-202
Author(s):  
Tran Anh Dung ◽  
Mai Van Tham ◽  
Do Xuan Quy ◽  
Tran The Truyen ◽  
Pham Van Ky ◽  
...  
Keyword(s):  
Experimental Study ◽  
Dynamic Load ◽  
Dynamic Measurement ◽  
Experimental Results ◽  
Load Factor ◽  
Dynamic Factor ◽  
Experimental Measurements ◽  
Train Speed ◽  
Dynamic Load Factor

AbstractThis paper presents simulation calculations and experimental measurements to determine the dynamic load factor (DLF) of train on the urban railway in Vietnam. Simulation calculations are performed by SIMPACK software. Dynamic measurement experiments were conducted on Cat Linh – Ha Dong line. The simulation and experimental results provide the DLF values with the largest difference of 2.46% when the train speed varies from 0 km/h to 80 km/h

An Experimental Study of Free Corrective Heat Transfer in a Parallelogrammic Enclosure

1983 ◽  
Vol 105 (3) ◽  
pp. 433-439 ◽  
Author(s):  
N. Seki ◽  
S. Fukusako ◽  
A. Yamaguchi
Keyword(s):  
Heat Transfer ◽  
Experimental Study ◽  
Nusselt Number ◽  
Correlation Equation ◽  
Transformer Oil ◽  
Experimental Measurements ◽  
Transfer Coefficients ◽  
Heat Transfer Coefficients ◽  
Prandtl Numbers ◽  
Rayleigh Numbers

Experimental measurements are presented for free convective heat transfer across a parallelogrammic enclosure with the various tilt angles of parallel upper and lower walls insulated. The experiments covered a range of Rayleigh numbers between 3.4 × 104 and 8.6 × 107, and Prandtl numbers between 0.70 and 480. Those also covered the tilt angles of the parallel insulated walls with respect to the horizontal, φ, of 0, ±25, ±45, ±60, and ±70 deg under an aspect ratio of H/W = 1.44. The fluids used were air, transformer oil, and water. It was found that the heat transfer coefficients for φ = −70 deg were decreased to be about 1/18 times those for φ = 0 deg. Experimental results are given as plots of the Nusselt number versus the Rayleigh number. A correlation equation is given for the Nusselt number, Nu, as a function of φ, Pr, and Ra.

Temperature Sensors Based on AlN/4H-SiC Diodes

2021 ◽  
Vol 13 (7) ◽  
pp. 1318-1323
Author(s):  
Myeong-Cheol Shin ◽  
Dong-Hyeon Kim ◽  
Seong-Woo Jung ◽  
Michael A. Schweitz ◽  
Sang-Mo Koo
Keyword(s):  
Annealing Temperature ◽  
Schottky Diodes ◽  
Forward Bias ◽  
Temperature Sensors ◽  
Electrical Characteristics ◽  
Voltage Range ◽  
Radio Frequency Sputtering ◽  
Sensing Applications ◽  
Current Voltage ◽  
Dc Bias

ABSTRACTThis study report on the formation of AlN/SiC heterostructure Schottky diodes for use of temperature sensing applications enhance the sensitivity. We analyzed the sensitivity of the AlN/SiC Schottky diode sensor depending on the annealing temperature. AlN/4H-SiC Schottky diodes were fabricated by depositing aluminum nitride (AlN) thin film on 4H/SiC by radio frequency sputtering. The forward bias electrical characteristics were determined under DC bias (in the voltage range of 0–1.5 V). The ideality factor, barrier height, and sensitivity were derived through current–voltage–temperature (I–V–T) measurements in the temperature range of 300–500 K. The sensitivity of the AlN/4H-SiC Schottky barrier diode ranged from 2.5–5.0 mV/K.

Расчетно-экспериментальное исследование влияния вдува/отсоса газа через перфорированную поверхность на пограничный слой при сверхзвуковом числе Маха

2021 ◽  
Vol 47 (21) ◽  
pp. 19
Author(s):  
П.А. Поливанов
Keyword(s):  
Boundary Layer ◽  
Experimental Study ◽  
Stokes Equations ◽  
Numerical Data ◽  
Navier Stokes ◽  
Experimental Measurements ◽  
Navier Stokes Equations ◽  
Piv Method ◽  
Sst Turbulence Model ◽  
Method Analysis

In this paper a numerical and experimental study of the effect of blowing/suction through a perforated surface on a turbulent boundary layer at a Mach number M = 1.4 is carried out. Most of the calculations were performed by Reynolds-averaged Navier-Stokes equations with the k-w SST turbulence model. The calculated geometry completely repeated the experimental one including the perforated surface. The numerical data were compared with experimental measurements obtained by the PIV method. Analysis of the data made it possible to find the limits of applicability of the numerical method for this flow.

Experimental study on thickness-related electrical characteristics in organic/metal-nanocluster/organic systems

2005 ◽  
Vol 98 (5) ◽  
pp. 054303 ◽  
Author(s):  
Seungmoon Pyo ◽  
Liping Ma ◽  
Jun He ◽  
Qianfei Xu ◽  
Yang Yang ◽  
...  
Keyword(s):  
Experimental Study ◽  
Electrical Characteristics ◽  
Organic Metal ◽  
Organic Systems ◽  
Metal Nanocluster

scholarly journals Enhancing performance of Ag–ZnO–Ag UV photodetector by piezo-phototronic effect

RSC Advances ◽  
2018 ◽  
Vol 8 (28) ◽  
pp. 15290-15296 ◽  
Author(s):  
Xiaotong Zhang ◽  
Yu Qiu ◽  
Dechao Yang ◽  
Bing Li ◽  
Heqiu Zhang ◽  
...  
Keyword(s):  
Polyester Fibre ◽  
Zno Nanowires ◽  
Ultraviolet Photodetector ◽  
Uv Photodetector ◽  
Metal Semiconductor Metal ◽  
Schottky Structure

An ultraviolet photodetector based on a ZnO nanowires with metal–semiconductor–metal Schottky structure was fabricated on a flexible polyester fibre substrate.

Sign in / Sign up

Export Citation Format

Share Document