Time-resolved experimental study of carrier lifetime in GaN epilayers

2005 ◽  
Vol 87 (24) ◽  
pp. 241918 ◽  
Author(s):  
J. Mickevičius ◽  
M. S. Shur ◽  
R. S. Qhalid Fareed ◽  
J. P. Zhang ◽  
R. Gaska ◽  
...  
Keyword(s):  
Experimental Study ◽  
Carrier Lifetime ◽  
Time Resolved

scholarly journals Влияние условий роста и уровня легирования на кинетику люминесценции слоев Ge : Sb, выращенных на кремнии

2020 ◽  
Vol 54 (7) ◽  
pp. 685
Author(s):  
Д.В. Юрасов ◽  
Н.А. Байдакова ◽  
А.Н. Яблонский ◽  
А.В. Новиков
Keyword(s):  
Doping Level ◽  
Room Temperature ◽  
Carrier Lifetime ◽  
Growth Conditions ◽  
Published Data ◽  
Rapid Thermal Anneal ◽  
Time Resolved ◽  
Light Emitting ◽  
Pl Intensity ◽  
Time Resolved Photoluminescence

Light-emitting properties of Ge-on-Si(001) layers doped by Sb were studied by stationary and time-resolved photoluminescence (PL) at room temperature. It was obtained that the PL intensity of n-Ge/Si(001) structures is maximized when the doping level is close to the equilibrium solubility of Sb in Ge (~1019 cm-3) which is in accordance with the previously published data. Time-resolved studies of the direct-related PL signal have shown that both the donor density and the growth conditions of doped layer, in particular, the growth temperature influence the PL kinetics. It was obtained that the increase of doping level leads to the decrease of the characteristic carrier lifetime. Moreover, usage of low growth temperatures which is needed to form the doped n-Ge layers also results in shortening of the carrier lifetime as compared with Ge layers grown at high temperatures. It was found that rapid thermal anneal at proper conditions could partially compensate the above mentioned detrimental effects and lead to the increase of both the PL intensity and carrier lifetime.

Layer number dependence of carrier lifetime in graphenes observed using time-resolved mid-infrared luminescence

2015 ◽  
Vol 637 ◽  
pp. 58-62 ◽  
Author(s):  
Hiroshi Watanabe ◽  
Tomohiro Kawasaki ◽  
Takushi Iimori ◽  
Fumio Komori ◽  
Tohru Suemoto
Keyword(s):  
Carrier Lifetime ◽  
Time Resolved ◽  
Mid Infrared ◽  
Layer Number ◽  
Infrared Luminescence

Nitrogen function of aluminum-nitride codoped ZnO films deposited using cosputter system

2009 ◽  
Vol 24 (7) ◽  
pp. 2252-2258 ◽  
Author(s):  
Li-Wen Lai ◽  
Jheng-Tai Yan ◽  
Chia-Hsun Chen ◽  
Li-Ren Lou ◽  
Ching-Ting Lee
Keyword(s):  
Low Temperature ◽  
Oxygen Vacancies ◽  
Carrier Lifetime ◽  
Nitrogen Atmosphere ◽  
Zno Films ◽  
Deposition Condition ◽  
Time Resolved ◽  
Sapphire Substrates ◽  
Crystallographic Structures ◽  
Time Resolved Photoluminescence

AlN codoped ZnO films were deposited on sapphire substrates at low temperature using a cosputter system under various N2/(N2 + Ar) flow ratios. To investigate the nitrogen function, the ratio of nitrogen ambient was varied during cosputtering. AlN codoped ZnO films with various crystallographic structures and bonding configurations were measured. With an adequate nitrogen atmosphere deposition condition and postannealing temperature at 450 °C, the p-type conductive behaviors of AlN codoped ZnO films were achieved due to the formation of Zn–N bonds. According to the low-temperature photoluminescence spectra, the binding energy (EA) of 0.16 eV for N acceptors can be calculated. Using time-resolved photoluminescence measurement, the carrier lifetime in AlN codoped ZnO films increases due to the reduction of oxygen vacancies caused by the occupation of adequate nitrogen atoms.

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