Pseudoelasticity of martensitic titanium-nickel shape-memory films studied by in situ heating nanoindentation and transmission electron microscopy

2005 ◽  
Vol 87 (26) ◽  
pp. 263108 ◽  
Author(s):  
K. Komvopoulos ◽  
X.-G. Ma
2005 ◽  
Vol 20 (7) ◽  
pp. 1808-1813 ◽  
Author(s):  
X.-G. Ma ◽  
K. Komvopoulos

Transmission electron microscopy (TEM) and nanoindentation, both with in situ heating capability, and electrical resistivity measurements were used to investigate phase transformation phenomena and thermomechanical behavior of shape-memory titanium-nickel (TiNi) films. The mechanisms responsible for phase transformation in the nearly equiatomic TiNi films were revealed by heating and cooling the samples inside the TEM vacuum chamber. Insight into the deformation behavior of the TiNi films was obtained from the nanoindentation response at different temperatures. A transition from elastic-plastic to pseudoelastic deformation of the martensitic TiNi films was encountered during indentation and heating. In contrast to the traditional belief, the martensitic TiNi films exhibited a pseudoelastic behavior during nanoindentation within a specific temperature range. This unexpected behavior is interpreted in terms of the evolution of martensitic variants and changes in the mobility of the twinned structures in the martensitic TiNi films, observed with the TEM during in situ heating.


2012 ◽  
Vol 70 ◽  
pp. 109-112 ◽  
Author(s):  
Hongxing Zheng ◽  
Zhiping Luo ◽  
Dong Fang ◽  
Francis R. Phillips ◽  
Dimitris C. Lagoudas

2019 ◽  
Vol 123 (45) ◽  
pp. 27843-27853 ◽  
Author(s):  
Mengjing Wang ◽  
Jung Han Kim ◽  
Sang Sub Han ◽  
Minyeong Je ◽  
Jaeyoung Gil ◽  
...  

1987 ◽  
Vol 106 ◽  
Author(s):  
R. Sinclair ◽  
A. H. Carim ◽  
J. Morgiel ◽  
J. C. Bravman

ABSTRACTSome typical microstructural studies of polycrystalline silicon using transmission electron microscopy (TEM) are described, including the application of this material for assisting TEM investigations themselves. Examples include oxidation and realignment of polysilicon thin films, the structure of polysilicon in EEPROM devices, polysilicon in trench capacitors and measurement of SiO2 layer thicknesses with polysilicon overlayers. It is also shown tha grain growth in heavily phosphorus doped polysilicon films can be followed by in situ heating in the TEM.


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