Observation of minority-carrier traps in InGaN∕GaN multiple-quantum-well light-emitting diodes during deep-level transient spectroscopy measurements
2009 ◽
Vol 404
(23-24)
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pp. 4907-4910
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2003 ◽
Vol 42
(Part 2, No. 3A)
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pp. L226-L228
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2003 ◽
Vol 0
(7)
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pp. 2257-2260
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Keyword(s):
2010 ◽
Vol 43
(35)
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pp. 354004
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Keyword(s):
2014 ◽
Vol 53
(10)
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pp. 101601
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2010 ◽
Vol 207
(6)
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pp. 1404-1406
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