Viscosity, Second pVT-Virial Coefficient, and Diffusion of Pure and Mixed Small Alkanes CH4, C2H6, C3H8, n-C4H10, i-C4H10, n-C5H12, i-C5H12, and C(CH3)4 Calculated by Means of an Isotropic Temperature-Dependent Potential. I. Pure Alkanes

2006 ◽  
Vol 35 (3) ◽  
pp. 1331-1364 ◽  
Author(s):  
L. Zarkova ◽  
U. Hohm ◽  
M. Damyanova
Keyword(s):  
Virial Coefficient ◽  
Temperature Dependent ◽  
Dependent Potential ◽  
And Diffusion

On the Temperature Dependence of Resistivity of Polycrystalline Silicon Films

1987 ◽  
Vol 106 ◽  
Author(s):  
Mark S. Rodder ◽  
Dimitri A. Antoniadis
Keyword(s):  
Numerical Calculation ◽  
Polycrystalline Silicon ◽  
Amorphous Region ◽  
Defect States ◽  
Temperature Dependent ◽  
Step Process ◽  
Dependent Potential ◽  
Si Films ◽  
Polycrystalline Silicon Films ◽  
P Type

ABSTRACTIt is shown that the grain boundary (GB) in polycrystalline-silicon (poly-Si) films need not be modeled as a temperature-dependent potential barrier or as an amorphous region to explain the temperature (T) dependence of resistivity (ρ) in p-type poly-Si films at low T. Specifically, we consider that QB defect states allow for the tunneling component of current to occur by a two-step process. Incorporation of the two-step process in a numerical calculation of ρ vs. T results in excellent agreement with available data from 100 K to 300 K.

scholarly journals Recombination and diffusion processes in electronic grade 4H silicon carbide

2019 ◽  
Vol 59 (1) ◽  
Author(s):  
Patrik Ščajev ◽  
Liudvikas Subačius ◽  
Kęstutis Jarašiūnas ◽  
Masashi Kato
Keyword(s):  
Functional Form ◽  
Diffusion Processes ◽  
Laser Pulses ◽  
Free Carrier Absorption ◽  
Temperature Dependent ◽  
Subsequent Decrease ◽  
Recombination Processes ◽  
Carrier Absorption ◽  
And Diffusion ◽  
Trap Activation

Carrier dynamics in n-type 4H-SiC epilayers of varying thicknesses and low Z1/2 defect concentrations are investigated here in wide ranges of excess carrier density and temperature. Several techniques are employed to monitor carrier diffusion and recombination processes, including light induced transient grating (LITG), microwave photoconductance decay (MPCD) and free carrier absorption (FCA) using ps-laser pulses at 355 nm. The observed increase of the diffusion coefficient with the increasing excitation level is explained by the transition from the minority to the bipolar transport regime. Its subsequent decrease with even higher excitations is found to be governed by band-gap renormalization and degeneracy effects. The bulk lifetime, limited by hole traps at 0.19–0.24 eV above the valence band at lower excitations, was found to decrease from few microseconds to hundreds of nanoseconds during the transition regime from the minority to the bipolar transport. Our temperature-dependent measurements confirmed the trap activation energy and provided the approximate functional form of electron and hole lifetimes as τe = 340 × (T/300 K)3/2 ns and τh = 100 × (T/300 K)–1/2 ns, for the temperature T range 80–800 K. It was found to hold for 65 and 120 μm sample thicknesses, while the lifetimes were found to be twice shorter for the sample 35 μm thick.

scholarly journals Barrier Evaluation by Linearly Increasing Voltage Technique Applied to Si Solar Cells and Irradiated Pin Diodes

2012 ◽  
Vol 2012 ◽  
pp. 1-16 ◽  
Author(s):  
E. Gaubas ◽  
T. Ceponis ◽  
V. Kalendra ◽  
J. Kusakovskij ◽  
A. Uleckas
Keyword(s):  
Solar Cells ◽  
Temperature Dependent ◽  
Particle Detectors ◽  
Si Solar Cells ◽  
Diffusion Capacitance ◽  
Barrier Capacitance ◽  
Infra Red ◽  
The Impact ◽  
And Diffusion ◽  
Current Transients

Technique for barrier evaluation by measurements of current transients induced by linearly increasing voltage pulse based on analysis of barrier and diffusion capacitance changes is presented. The components of the barrier capacitance charging and generation/recombination currents are discussed. Different situations of the impact of deep center defects on barrier and diffusion capacitance changes are analyzed. Basics of the profiling of layered junction structures using the presented technique are discussed. Instrumentation for implementation of this technique and for investigations of the steady-state bias infra-red illumination and temperature dependent variations of the barrier capacitance charging and generation/recombination currents are described. Applications of this technique for the analysis of barrier quality in solar cells and particle detectors fabricated on silicon material are demonstrated.

A temperature-dependent potential model for mercury in the description of vapour-liquid equilibrium & adsorption in activated carbon

2020 ◽  
Vol 215 ◽  
pp. 115453 ◽  
Author(s):  
Xiu Liu ◽  
Chunyan Fan ◽  
D.D. Do ◽  
Vishnu Pareek ◽  
Peiyu Yang
Keyword(s):  
Activated Carbon ◽  
Potential Model ◽  
Equilibrium Adsorption ◽  
Temperature Dependent ◽  
Liquid Equilibrium ◽  
Dependent Potential

Temperature-dependent potential in cluster-decay process

2016 ◽  
Vol 952 ◽  
pp. 28-40 ◽  
Author(s):  
R. Gharaei ◽  
V. Zanganeh
Keyword(s):  
Decay Process ◽  
Cluster Decay ◽  
Temperature Dependent ◽  
Dependent Potential
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