Correlation between optical and electrical properties in In0.52Al0.48As∕InxGa1−xAs metamorphic high-electron-mobility-transistor structures on GaAs substrates

Journal of Applied Physics ◽

10.1063/1.2222404 ◽

2006 ◽

Vol 100 (3) ◽

pp. 033705 ◽

Author(s):

L. J. Cui ◽

Y. P. Zeng ◽

B. Q. Wang ◽

Z. P. Zhu ◽

S. L. Guo ◽

...

Keyword(s):

Electrical Properties ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

Optical And Electrical Properties ◽

High Electron Mobility ◽

Gaas Substrates

Download Full-text

Effect of rapid thermal annealing on the optical and electrical properties of metamorphic high electron mobility transistor structures with composite InGaAs∕InP channel

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.2163890 ◽

2006 ◽

Vol 24 (1) ◽

pp. 292 ◽

Author(s):

Yuwei Liu ◽

Hong Wang

Keyword(s):

Electrical Properties ◽

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

Optical And Electrical Properties ◽

High Electron Mobility

Download Full-text

Molecular beam epitaxial growth and device performance of metamorphic high electron mobility transistor structures fabricated on GaAs substrates

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.590707 ◽

1999 ◽

Vol 17 (3) ◽

pp. 1131 ◽

Author(s):

W. E. Hoke ◽

P. J. Lemonias ◽

J. J. Mosca ◽

P. S. Lyman ◽

A. Torabi ◽

...

Keyword(s):

Epitaxial Growth ◽

Electron Mobility ◽

Molecular Beam ◽

High Electron Mobility Transistor ◽

Device Performance ◽

High Electron ◽

High Electron Mobility ◽

Molecular Beam Epitaxial ◽

Gaas Substrates ◽

Molecular Beam Epitaxial Growth

Download Full-text

Strain relaxation and dislocation filtering in metamorphic high electron mobility transistor structures grown on GaAs substrates

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1376384 ◽

2001 ◽

Vol 19 (4) ◽

pp. 1510 ◽

Author(s):

D. Lubyshev ◽

W. K. Liu ◽

T. R. Stewart ◽

A. B. Cornfeld ◽

X. M. Fang ◽

...

Keyword(s):

Electron Mobility ◽

Strain Relaxation ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility ◽

Gaas Substrates

Download Full-text

Electrical properties of InAlN/GaN high electron mobility transistor with Al2O3, ZrO2, and GdScO3 gate dielectrics

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.3521506 ◽

2011 ◽

Vol 29 (1) ◽

pp. 01A808 ◽

Author(s):

K. Čičo ◽

K. Hušeková ◽

M. Ťapajna ◽

D. Gregušová ◽

R. Stoklas ◽

...

Keyword(s):

Electrical Properties ◽

Electron Mobility ◽

Gate Dielectrics ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility

Download Full-text

Metamorphic InGaAs/InAlAs quantum well structures grown on GaAs substrates for high electron mobility transistor applications

Applied Physics Letters ◽

10.1063/1.122582 ◽

1998 ◽

Vol 73 (19) ◽

pp. 2760-2762 ◽

Author(s):

M. Behet ◽

K. van der Zanden ◽

G. Borghs ◽

A. Behres

Keyword(s):

Quantum Well ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility ◽

Quantum Well Structures ◽

Gaas Substrates

Download Full-text

Effects of Si δ -Doping Condition and Growth Interruption on Electrical Properties of InP-Based High Electron Mobility Transistor Structures

Chinese Physics Letters ◽

10.1088/0256-307x/32/9/097101 ◽

2015 ◽

Vol 32 (9) ◽

pp. 097101

Author(s):

Shu-Xing Zhou ◽

Ming Qi ◽

Li-Kun Ai ◽

An-Huai Xu ◽

Li-Dan Wang ◽

...

Keyword(s):

Electrical Properties ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility ◽

Growth Interruption ◽

Doping Condition

Download Full-text

Zero-field spin splitting in In0.52Al0.48As/InxGa1−xAs metamorphic high-electron-mobility-transistor structures on GaAs substrates using Shubnikov–de Haas measurements

Applied Physics Letters ◽

10.1063/1.1476055 ◽

2002 ◽

Vol 80 (17) ◽

pp. 3132-3134 ◽

Author(s):

L. J. Cui ◽

Y. P. Zeng ◽

B. Q. Wang ◽

Z. P. Zhu ◽

L. Y. Lin ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistor ◽

Spin Splitting ◽

High Electron ◽

High Electron Mobility ◽

Gaas Substrates

Download Full-text

Effect of Mesa Spacing on the Electrical Properties of Mesa Isolation in High Electron Mobility Transistor Structures

2006 IEEE International Conference on Semiconductor Electronics ◽

10.1109/smelec.2006.380682 ◽

2006 ◽

Author(s):

Hesly Afida Hashim ◽

Mohd. Khairy Othman ◽

Mohd. Nizam Osman ◽

Asban Dolah ◽

Mohamed Razman Yahya

Keyword(s):

Electrical Properties ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility

Download Full-text

Effect of AlxGa1−xN buffer layer on the structural and electrical properties of AlGaN/GaN/AlxGa1−xN double heterojunction high electron mobility transistor structures

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.5129031 ◽

2020 ◽

Vol 38 (2) ◽

pp. 022204

Author(s):

Yongjun Nam ◽

Uiho Choi ◽

Kyeongjae Lee ◽

Taehoon Jang ◽

Donghyeop Jung ◽

...

Keyword(s):

Electrical Properties ◽

Buffer Layer ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility ◽

Structural And Electrical Properties ◽

Double Heterojunction

Download Full-text

Electrical properties of GaN (Fe) buffers for AlGaN∕GaN high electron mobility transistor structures

Applied Physics Letters ◽

10.1063/1.2838734 ◽

2008 ◽

Vol 92 (4) ◽

pp. 042110 ◽

Author(s):

A. Y. Polyakov ◽

N. B. Smirnov ◽

A. V. Govorkov ◽

T. G. Yugova ◽

A. V. Markov ◽

...

Keyword(s):

Electrical Properties ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility

Download Full-text