Effects of Si δ -Doping Condition and Growth Interruption on Electrical Properties of InP-Based High Electron Mobility Transistor Structures

Chinese Physics Letters ◽

10.1088/0256-307x/32/9/097101 ◽

2015 ◽

Vol 32 (9) ◽

pp. 097101

Author(s):

Shu-Xing Zhou ◽

Ming Qi ◽

Li-Kun Ai ◽

An-Huai Xu ◽

Li-Dan Wang ◽

...

Keyword(s):

Electrical Properties ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility ◽

Growth Interruption ◽

Doping Condition

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Correlation between optical and electrical properties in In0.52Al0.48As∕InxGa1−xAs metamorphic high-electron-mobility-transistor structures on GaAs substrates

Journal of Applied Physics ◽

10.1063/1.2222404 ◽

2006 ◽

Vol 100 (3) ◽

pp. 033705 ◽

Author(s):

L. J. Cui ◽

Y. P. Zeng ◽

B. Q. Wang ◽

Z. P. Zhu ◽

S. L. Guo ◽

...

Keyword(s):

Electrical Properties ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

Optical And Electrical Properties ◽

High Electron Mobility ◽

Gaas Substrates

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Electrical properties of InAlN/GaN high electron mobility transistor with Al2O3, ZrO2, and GdScO3 gate dielectrics

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.3521506 ◽

2011 ◽

Vol 29 (1) ◽

pp. 01A808 ◽

Author(s):

K. Čičo ◽

K. Hušeková ◽

M. Ťapajna ◽

D. Gregušová ◽

R. Stoklas ◽

...

Keyword(s):

Electrical Properties ◽

Electron Mobility ◽

Gate Dielectrics ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility

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Molecular beam epitaxy growth of In0.52Al0.48As∕In0.53Ga0.47As metamorphic high electron mobility transistor employing growth interruption and in situ rapid thermal annealing

Applied Physics Letters ◽

10.1063/1.2189607 ◽

2006 ◽

Vol 88 (13) ◽

pp. 132108 ◽

Author(s):

Soo-Ghang Ihn ◽

Seong June Jo ◽

Jong-In Song

Keyword(s):

Molecular Beam Epitaxy ◽

Rapid Thermal Annealing ◽

Electron Mobility ◽

Molecular Beam ◽

High Electron Mobility Transistor ◽

Molecular Beam Epitaxy Growth ◽

High Electron ◽

High Electron Mobility ◽

Growth Interruption

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Effect of Mesa Spacing on the Electrical Properties of Mesa Isolation in High Electron Mobility Transistor Structures

2006 IEEE International Conference on Semiconductor Electronics ◽

10.1109/smelec.2006.380682 ◽

2006 ◽

Author(s):

Hesly Afida Hashim ◽

Mohd. Khairy Othman ◽

Mohd. Nizam Osman ◽

Asban Dolah ◽

Mohamed Razman Yahya

Keyword(s):

Electrical Properties ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility

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Effect of AlxGa1−xN buffer layer on the structural and electrical properties of AlGaN/GaN/AlxGa1−xN double heterojunction high electron mobility transistor structures

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.5129031 ◽

2020 ◽

Vol 38 (2) ◽

pp. 022204

Author(s):

Yongjun Nam ◽

Uiho Choi ◽

Kyeongjae Lee ◽

Taehoon Jang ◽

Donghyeop Jung ◽

...

Keyword(s):

Electrical Properties ◽

Buffer Layer ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility ◽

Structural And Electrical Properties ◽

Double Heterojunction

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Electrical properties of GaN (Fe) buffers for AlGaN∕GaN high electron mobility transistor structures

Applied Physics Letters ◽

10.1063/1.2838734 ◽

2008 ◽

Vol 92 (4) ◽

pp. 042110 ◽

Author(s):

A. Y. Polyakov ◽

N. B. Smirnov ◽

A. V. Govorkov ◽

T. G. Yugova ◽

A. V. Markov ◽

...

Keyword(s):

Electrical Properties ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility

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Simulation of electrical properties of InxAl1—xN/AlN/GaN high electron mobility transistor structure

Journal of Semiconductors ◽

10.1088/1674-4926/32/8/083003 ◽

2011 ◽

Vol 32 (8) ◽

pp. 083003

Author(s):

Yang Bi ◽

Xiaoliang Wang ◽

Hongling Xiao ◽

Cuimei Wang ◽

Cuibai Yang ◽

...

Keyword(s):

Electrical Properties ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

Transistor Structure ◽

High Electron Mobility

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Influence of processing and annealing steps on electrical properties of InAlN/GaN high electron mobility transistor with Al2O3 gate insulation and passivation

Solid-State Electronics ◽

10.1016/j.sse.2011.09.002 ◽

2012 ◽

Vol 67 (1) ◽

pp. 74-78 ◽

Author(s):

K. Čičo ◽

D. Gregušová ◽

J. Kuzmík ◽

M. Jurkovič ◽

A. Alexewicz ◽

...

Keyword(s):

Electrical Properties ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility

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The critical role of growth temperature on the structural and electrical properties of AlGaN/GaN high electron mobility transistor heterostructures grown on Si(111)

Journal of Applied Physics ◽

10.1063/1.3063698 ◽

2009 ◽

Vol 105 (3) ◽

pp. 033701 ◽

Author(s):

N. Baron ◽

Y. Cordier ◽

S. Chenot ◽

P. Vennéguès ◽

O. Tottereau ◽

...

Keyword(s):

Electrical Properties ◽

Growth Temperature ◽

Electron Mobility ◽

Critical Role ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility ◽

Structural And Electrical Properties

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Effect of rapid thermal annealing on the optical and electrical properties of metamorphic high electron mobility transistor structures with composite InGaAs∕InP channel

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.2163890 ◽

2006 ◽

Vol 24 (1) ◽

pp. 292 ◽

Author(s):

Yuwei Liu ◽

Hong Wang

Keyword(s):

Electrical Properties ◽

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

Optical And Electrical Properties ◽

High Electron Mobility

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