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Effect of Mesa Spacing on the Electrical Properties of Mesa Isolation in High Electron Mobility Transistor Structures
2006 IEEE International Conference on Semiconductor Electronics
◽
10.1109/smelec.2006.380682
◽
2006
◽
Author(s):
Hesly Afida Hashim
◽
Mohd. Khairy Othman
◽
Mohd. Nizam Osman
◽
Asban Dolah
◽
Mohamed Razman Yahya
Keyword(s):
Electrical Properties
◽
Electron Mobility
◽
High Electron Mobility Transistor
◽
High Electron
◽
High Electron Mobility
Download Full-text
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High Electron Mobility
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Electrical properties of GaN (Fe) buffers for AlGaN∕GaN high electron mobility transistor structures
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