Electrical properties of InAlN/GaN high electron mobility transistor with Al2O3, ZrO2, and GdScO3 gate dielectrics
2011 ◽
Vol 29
(1)
◽
pp. 01A808
◽
2016 ◽
Vol 10
(5)
◽
pp. 423-432
◽
2020 ◽
Vol 38
(2)
◽
pp. 022204