Effect of rapid thermal annealing on the optical and electrical properties of metamorphic high electron mobility transistor structures with composite InGaAs∕InP channel

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.2163890 ◽

2006 ◽

Vol 24 (1) ◽

pp. 292 ◽

Author(s):

Yuwei Liu ◽

Hong Wang

Keyword(s):

Electrical Properties ◽

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

Optical And Electrical Properties ◽

High Electron Mobility

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Rapid thermal annealing characteristics of bulk AlInAs/InP and AlInAs/GaInAs/InP high electron mobility transistor structures with planar silicon doping

Journal of Applied Physics ◽

10.1063/1.352277 ◽

1992 ◽

Vol 72 (8) ◽

pp. 3798-3802 ◽

Author(s):

Kürşad Kiziloḡlu ◽

Majid M. Hashemi ◽

Lie‐Wei Yin ◽

Yuan Jing Li ◽

Pierre M. Petroff ◽

...

Keyword(s):

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

Silicon Doping ◽

High Electron Mobility ◽

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Correlation between optical and electrical properties in In0.52Al0.48As∕InxGa1−xAs metamorphic high-electron-mobility-transistor structures on GaAs substrates

Journal of Applied Physics ◽

10.1063/1.2222404 ◽

2006 ◽

Vol 100 (3) ◽

pp. 033705 ◽

Author(s):

L. J. Cui ◽

Y. P. Zeng ◽

B. Q. Wang ◽

Z. P. Zhu ◽

S. L. Guo ◽

...

Keyword(s):

Electrical Properties ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

Optical And Electrical Properties ◽

High Electron Mobility ◽

Gaas Substrates

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Effect of rapid thermal annealing on planar‐doped pseudomorphic InGaAs high electron mobility transistor structures

Applied Physics Letters ◽

10.1063/1.104897 ◽

1991 ◽

Vol 58 (20) ◽

pp. 2273-2275 ◽

Author(s):

D. C. Streit ◽

W. L. Jones ◽

L. P. Sadwick ◽

C. W. Kim ◽

R. J. Hwu

Keyword(s):

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility

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Effects of postgrowth rapid thermal annealing on InAlAs∕InGaAs metamorphic high-electron-mobility transistor grown on a compositionally graded InAlAs∕InGaAlAs buffer

Applied Physics Letters ◽

10.1063/1.1988983 ◽

2005 ◽

Vol 87 (4) ◽

pp. 042108 ◽

Author(s):

Soo-Ghang Ihn ◽

Seong-June Jo ◽

Jong-In Song

Keyword(s):

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility

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Rapid thermal annealing effects on step-graded InAlAs buffer layer and In0.52Al0.48As/In0.53Ga0.47As metamorphic high electron mobility transistor structures on GaAs substrates

Journal of Applied Physics ◽

10.1063/1.1433174 ◽

2002 ◽

Vol 91 (4) ◽

pp. 2429-2432 ◽

Author(s):

L. J. Cui ◽

Y. P. Zeng ◽

B. Q. Wang ◽

J. Wu ◽

Z. P. Zhu ◽

...

Keyword(s):

Buffer Layer ◽

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility ◽

Gaas Substrates ◽

Annealing Effects

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Photoluminescence and photoreflectance of Al0.24Ga0.76As/In0.15Ga0.85As/GaAs pseudomorphic high electron mobility transistor structures after rapid thermal annealing

Journal of Crystal Growth ◽

10.1016/s0022-0248(02)01478-1 ◽

2002 ◽

Vol 243 (1) ◽

pp. 66-70 ◽

Author(s):

Dong Yul Lee ◽

Jong Su Kim ◽

D.L Kim ◽

K.H Kim ◽

J.S Son ◽

...

Keyword(s):

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility

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Electrical properties of InAlN/GaN high electron mobility transistor with Al2O3, ZrO2, and GdScO3 gate dielectrics

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.3521506 ◽

2011 ◽

Vol 29 (1) ◽

pp. 01A808 ◽

Author(s):

K. Čičo ◽

K. Hušeková ◽

M. Ťapajna ◽

D. Gregušová ◽

R. Stoklas ◽

...

Keyword(s):

Electrical Properties ◽

Electron Mobility ◽

Gate Dielectrics ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility

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Effects of Si δ -Doping Condition and Growth Interruption on Electrical Properties of InP-Based High Electron Mobility Transistor Structures

Chinese Physics Letters ◽

10.1088/0256-307x/32/9/097101 ◽

2015 ◽

Vol 32 (9) ◽

pp. 097101

Author(s):

Shu-Xing Zhou ◽

Ming Qi ◽

Li-Kun Ai ◽

An-Huai Xu ◽

Li-Dan Wang ◽

...

Keyword(s):

Electrical Properties ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility ◽

Growth Interruption ◽

Doping Condition

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Molecular beam epitaxy growth of In0.52Al0.48As∕In0.53Ga0.47As metamorphic high electron mobility transistor employing growth interruption and in situ rapid thermal annealing

Applied Physics Letters ◽

10.1063/1.2189607 ◽

2006 ◽

Vol 88 (13) ◽

pp. 132108 ◽

Author(s):

Soo-Ghang Ihn ◽

Seong June Jo ◽

Jong-In Song

Keyword(s):

Molecular Beam Epitaxy ◽

Rapid Thermal Annealing ◽

Electron Mobility ◽

Molecular Beam ◽

High Electron Mobility Transistor ◽

Molecular Beam Epitaxy Growth ◽

High Electron ◽

High Electron Mobility ◽

Growth Interruption

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Effect of Mesa Spacing on the Electrical Properties of Mesa Isolation in High Electron Mobility Transistor Structures

2006 IEEE International Conference on Semiconductor Electronics ◽

10.1109/smelec.2006.380682 ◽

2006 ◽

Author(s):

Hesly Afida Hashim ◽

Mohd. Khairy Othman ◽

Mohd. Nizam Osman ◽

Asban Dolah ◽

Mohamed Razman Yahya

Keyword(s):

Electrical Properties ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility

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