High-performance metal-semiconductor-metal deep-ultraviolet photodetectors based on homoepitaxial diamond thin film

2006 ◽  
Vol 89 (11) ◽  
pp. 113509 ◽  
Author(s):  
Meiyong Liao ◽  
Yasuo Koide
2007 ◽  
Vol 546-549 ◽  
pp. 1759-1762
Author(s):  
Mei Yong Liao ◽  
Yasuo Koide

Metal-semiconductor-metal (MSM) planar photodiodes and photoconductors were fabricated on unintentionally doped homoepitaxial diamond thin films deposited on Ib and IIa-type diamond substrated. The MSM photoconductor on the epilayer grown on the Ib-type substrate exhibits the highest discrimination ratio up to 108 between 210 nm and visible light and a photocurrent gain around 33 at 220 nm. The persistent photoconductivity is rather week for such kind of photoconductor.


2020 ◽  
Vol 825 ◽  
pp. 153882 ◽  
Author(s):  
Yan Li ◽  
Dan Kuang ◽  
Yanfei Gao ◽  
Jin Cheng ◽  
Xuyang Li ◽  
...  

2018 ◽  
Vol 18 (23) ◽  
pp. 9542-9547 ◽  
Author(s):  
Brent Cook ◽  
Qingfeng Liu ◽  
Maogang Gong ◽  
Dan Ewing ◽  
Matthew Casper ◽  
...  

Nanoscale ◽  
2018 ◽  
Vol 10 (12) ◽  
pp. 5559-5565 ◽  
Author(s):  
Heng Liu ◽  
Junhua Meng ◽  
Xingwang Zhang ◽  
Yanan Chen ◽  
Zhigang Yin ◽  
...  

The deep ultraviolet photodetectors based on 2D h-BN show a high on/off ratio of >103 and good spectral selectivity.


1998 ◽  
Vol 72 (10) ◽  
pp. 1131-1133 ◽  
Author(s):  
Wei Jiang ◽  
Jaeshin Ahn ◽  
Feng-Lan Xu ◽  
Chin-Yi Liaw ◽  
Yuen-Chuen Chan ◽  
...  

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