Printing High-Performance Tungsten Oxide Thin Film Ultraviolet Photodetectors on ZnO Quantum Dot Textured SiO2 Surface

2018 ◽  
Vol 18 (23) ◽  
pp. 9542-9547 ◽  
Author(s):  
Brent Cook ◽  
Qingfeng Liu ◽  
Maogang Gong ◽  
Dan Ewing ◽  
Matthew Casper ◽  
...  
Keyword(s):  
Thin Film ◽  
Quantum Dot ◽  
Tungsten Oxide ◽  
High Performance ◽  
Oxide Thin Film ◽  
Sio2 Surface ◽  
Ultraviolet Photodetectors

scholarly journals Flexible and efficient perovskite quantum dot solar cells via hybrid interfacial architecture

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Long Hu ◽  
Qian Zhao ◽  
Shujuan Huang ◽  
Jianghui Zheng ◽  
Xinwei Guan ◽  
...  
Keyword(s):  
Thin Film ◽  
Quantum Dots ◽  
Solar Cells ◽  
Quantum Dot ◽  
High Performance ◽  
Mechanical Stability ◽  
Mechanical Adhesion ◽  
Perovskite Quantum Dots ◽  
Efficient Charge ◽  
Photovoltaic Technologies

AbstractAll-inorganic CsPbI3 perovskite quantum dots have received substantial research interest for photovoltaic applications because of higher efficiency compared to solar cells using other quantum dots materials and the various exciting properties that perovskites have to offer. These quantum dot devices also exhibit good mechanical stability amongst various thin-film photovoltaic technologies. We demonstrate higher mechanical endurance of quantum dot films compared to bulk thin film and highlight the importance of further research on high-performance and flexible optoelectronic devices using nanoscale grains as an advantage. Specifically, we develop a hybrid interfacial architecture consisting of CsPbI3 quantum dot/PCBM heterojunction, enabling an energy cascade for efficient charge transfer and mechanical adhesion. The champion CsPbI3 quantum dot solar cell has an efficiency of 15.1% (stabilized power output of 14.61%), which is among the highest report to date. Building on this strategy, we further demonstrate a highest efficiency of 12.3% in flexible quantum dot photovoltaics.

High Performance Solution-Processed Indium Oxide Thin-Film Transistors

2008 ◽  
Vol 130 (38) ◽  
pp. 12580-12581 ◽  
Author(s):  
Hyun Sung Kim ◽  
Paul D. Byrne ◽  
Antonio Facchetti ◽  
Tobin J. Marks
Keyword(s):  
Thin Film ◽  
Indium Oxide ◽  
Thin Film Transistors ◽  
High Performance ◽  
Oxide Thin Film ◽  
Solution Processed ◽  
Indium Oxide Thin Film

High-sensitivity hybrid PbSe/ITZO thin film-based phototransistor detecting from 2100 nm to 2500 nm near-infrared illumination

2022 ◽  
Author(s):  
Ali Sehpar Shikoh ◽  
Gi Sang Choi ◽  
Sungmin Hong ◽  
Kwang Seob Jeong ◽  
Jaekyun Kim
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
High Performance ◽  
Near Infrared ◽  
Effective Diffusion ◽  
Band Alignment ◽  
Oxide Thin Film ◽  
Photogenerated Carrier ◽  
Channel Layer ◽  
Metal Oxide Thin Film

Abstract We report that high absorption PbSe colloidal quantum dots (QDs) having a peak absorbance beyond 2100 nm were synthesized and incorporated into InSnZnO (ITZO) channel layer-based thin film transistors (TFTs). It was intended that PbSe QDs with proportionally less photocurrent modulation can be remedied by semiconducting and low off-current ITZO-based TFT configuration. Multiple deposition scheme of PbSe QDs on ITZO metal oxide thin film gave rise to nearly linear increase of film thickness with acceptably uniform and smooth surface (less than 10 nm). Hybrid PbSe/ITZO thin film-based phototransistor exhibited the best performance of near infrared (NIR) detection in terms of response time, sensitivity and detectivity as high as 0.38 s, 3.91 and 4.55 × 107 Jones at room temperature, respectively. This is indebted mainly from the effective diffusion of photogenerated carrier from the PbSe surface to ITZO channel layer as well as from the conduction band alignment between them. Therefore, we believe that our hybrid PbSe/ITZO material platform can be widely used to be in favour of incorporation of solution-processed colloidal light absorbing material into the high-performance metal oxide thin film transistor configuration.

scholarly journals Highly efficient electro-optically tunable smart-supercapacitors using an oxygen-excess nanograin tungsten oxide thin film

2017 ◽  
Vol 166 ◽  
pp. 78-85 ◽  
Author(s):  
Akbar I. Inamdar ◽  
Jongmin Kim ◽  
Yongcheol Jo ◽  
Hyeonseok Woo ◽  
Sangeun Cho ◽  
...  
Keyword(s):  
Thin Film ◽  
Tungsten Oxide ◽  
Oxide Thin Film ◽  
Highly Efficient ◽  
Oxygen Excess
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