HfTiAlO dielectric as an alternative high-k gate dielectric for the next generation of complementary metal-oxide-semiconductor devices

Applied Physics Letters ◽

10.1063/1.2396891 ◽

2007 ◽

Vol 90 (8) ◽

pp. 082911 ◽

Author(s):

N. Lu ◽

H.-J. Li ◽

J. J. Peterson ◽

D. L. Kwong

Keyword(s):

Metal Oxide ◽

Gate Dielectric ◽

Semiconductor Devices ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Next Generation ◽

High K ◽

High K Gate Dielectric

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Mismatch of dielectric constants at the interface of nanometer metal-oxide-semiconductor devices with high-K gate dielectric impacts on the inversion charge density

Pramana ◽

10.1007/s12043-011-0052-0 ◽

2011 ◽

Vol 76 (4) ◽

pp. 657-666 ◽

Author(s):

LING-FENG MAO

Keyword(s):

Metal Oxide ◽

Charge Density ◽

Gate Dielectric ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Dielectric Constants ◽

Oxide Semiconductor ◽

High K ◽

Inversion Charge ◽

High K Gate Dielectric

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Characteristics of Thermally Oxidized-Ti as a High-k Gate Dielectric on SiC Metal-Oxide-Semiconductor Devices

ECS Meeting Abstracts ◽

10.1149/ma2005-02/13/494 ◽

2005 ◽

Keyword(s):

Metal Oxide ◽

Gate Dielectric ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High K ◽

High K Gate Dielectric

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Advanced high-k gate dielectric amorphous LaGdO3 gated metal-oxide-semiconductor devices with sub-nanometer equivalent oxide thickness

Applied Physics Letters ◽

10.1063/1.4805037 ◽

2013 ◽

Vol 102 (19) ◽

pp. 192904 ◽

Author(s):

S. P. Pavunny ◽

P. Misra ◽

R. Thomas ◽

A. Kumar ◽

J. Schubert ◽

...

Keyword(s):

Metal Oxide ◽

Gate Dielectric ◽

Semiconductor Devices ◽

Oxide Thickness ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Equivalent Oxide Thickness ◽

High K ◽

High K Gate Dielectric

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Characteristics of Thermally Oxidized-Ti as a High-k Gate Dielectric on SiC Metal-Oxide-Semiconductor Devices

ECS Transactions ◽

10.1149/1.2209253 ◽

2019 ◽

Vol 1 (5) ◽

pp. 33-40

Author(s):

Rajat Mahapatra ◽

Nipapan Poolamai ◽

Nick Wright ◽

Amit K. Chakraborty ◽

Karl S. Coleman ◽

...

Keyword(s):

Metal Oxide ◽

Gate Dielectric ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High K ◽

High K Gate Dielectric

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High-performance GaAs metal-oxide-semiconductor capacitor by using NbAlON as high-k gate dielectric

Applied Physics Letters ◽

10.1063/1.4979101 ◽

2017 ◽

Vol 110 (12) ◽

pp. 123506 ◽

Author(s):

L. N. Liu ◽

H. W. Choi ◽

J. P. Xu ◽

P. T. Lai

Keyword(s):

Metal Oxide ◽

High Performance ◽

Gate Dielectric ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High K ◽

Metal Oxide Semiconductor Capacitor ◽

High K Gate Dielectric

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An Oxynitride Gate Dielectric for Sub-30 Å Complementary Metal Oxide Semiconductor Devices Using Precombustion of Nitrous Oxide

Journal of The Electrochemical Society ◽

10.1149/1.1499503 ◽

2002 ◽

Vol 149 (9) ◽

pp. G532 ◽

Author(s):

Steven M. Shank ◽

William F. Clark ◽

Wade J. Hodge

Keyword(s):

Nitrous Oxide ◽

Metal Oxide ◽

Gate Dielectric ◽

Semiconductor Devices ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Hybrid titanium–aluminum oxide layer as alternative high-k gate dielectric for the next generation of complementary metal–oxide–semiconductor devices

Applied Physics Letters ◽

10.1063/1.1856137 ◽

2005 ◽

Vol 86 (4) ◽

pp. 042904 ◽

Author(s):

O. Auciello ◽

W. Fan ◽

B. Kabius ◽

S. Saha ◽

J. A. Carlisle ◽

...

Keyword(s):

Metal Oxide ◽

Aluminum Oxide ◽

Oxide Layer ◽

Gate Dielectric ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High K ◽

Titanium Aluminum ◽

Aluminum Oxide Layer

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Suppressed growth of unstable low-k GeOx interlayer in Ge metal-oxide-semiconductor capacitor with high-k gate dielectric by annealing in water vapor

Applied Physics Letters ◽

10.1063/1.2723074 ◽

2007 ◽

Vol 90 (16) ◽

pp. 163502 ◽

Author(s):

X. Zou ◽

J. P. Xu ◽

C. X. Li ◽

P. T. Lai

Keyword(s):

Water Vapor ◽

Metal Oxide ◽

Gate Dielectric ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High K ◽

Low K ◽

Metal Oxide Semiconductor Capacitor ◽

High K Gate Dielectric

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Transient bicarrier response in high-k dielectrics and its impact on transient charge effects in high-k complementary metal oxide semiconductor devices

Applied Physics Letters ◽

10.1063/1.2195901 ◽

2006 ◽

Vol 88 (16) ◽

pp. 162905 ◽

Author(s):

C. Y. Kang ◽

J. C. Lee ◽

R. Choi ◽

S. C. Song ◽

C. D. Young ◽

...

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Charge Effects ◽

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Implementing TiO2 as gate dielectric for Ge-channel complementary metal-oxide-semiconductor devices by using HfO2/GeO2 interlayer

Applied Physics Letters ◽

10.1063/1.3490710 ◽

2010 ◽

Vol 97 (11) ◽

pp. 112905 ◽

Author(s):

Qi Xie ◽

Davy Deduytsche ◽

Marc Schaekers ◽

Matty Caymax ◽

Annelies Delabie ◽

...

Keyword(s):

Metal Oxide ◽

Gate Dielectric ◽

Semiconductor Devices ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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