Mismatch of dielectric constants at the interface of nanometer metal-oxide-semiconductor devices with high-K gate dielectric impacts on the inversion charge density

Pramana ◽  
2011 ◽  
Vol 76 (4) ◽  
pp. 657-666 ◽  
Author(s):  
LING-FENG MAO
Keyword(s):  
Metal Oxide ◽  
Charge Density ◽  
Gate Dielectric ◽  
Semiconductor Devices ◽  
Metal Oxide Semiconductor ◽  
Dielectric Constants ◽  
Oxide Semiconductor ◽  
High K ◽  
Inversion Charge ◽  
High K Gate Dielectric

Characteristics of Thermally Oxidized-Ti as a High-k Gate Dielectric on SiC Metal-Oxide-Semiconductor Devices

2019 ◽  
Vol 1 (5) ◽  
pp. 33-40
Author(s):  
Rajat Mahapatra ◽  
Nipapan Poolamai ◽  
Nick Wright ◽  
Amit K. Chakraborty ◽  
Karl S. Coleman ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Gate Dielectric ◽  
Semiconductor Devices ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
High K ◽  
High K Gate Dielectric

Alternative surface passivation on germanium for metal-oxide-semiconductor applications with high-k gate dielectric

2004 ◽  
Vol 85 (18) ◽  
pp. 4127-4129 ◽  
Author(s):  
Nan Wu ◽  
Qingchun Zhang ◽  
Chunxiang Zhu ◽  
D. S. H. Chan ◽  
M. F. Li ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Surface Passivation ◽  
Gate Dielectric ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
High K ◽  
High K Gate Dielectric
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