Mismatch of dielectric constants at the interface of nanometer metal-oxide-semiconductor devices with high-K gate dielectric impacts on the inversion charge density

LING-FENG MAO

doi:10.1007/s12043-011-0052-0

Mismatch of dielectric constants at the interface of nanometer metal-oxide-semiconductor devices with high-K gate dielectric impacts on the inversion charge density

Pramana ◽

10.1007/s12043-011-0052-0 ◽

2011 ◽

Vol 76 (4) ◽

pp. 657-666 ◽

Cited By ~ 4

Author(s):

LING-FENG MAO

Keyword(s):

Metal Oxide ◽

Charge Density ◽

Gate Dielectric ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Dielectric Constants ◽

Oxide Semiconductor ◽

High K ◽

Inversion Charge ◽

High K Gate Dielectric

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Characteristics of Thermally Oxidized-Ti as a High-k Gate Dielectric on SiC Metal-Oxide-Semiconductor Devices

ECS Meeting Abstracts ◽

10.1149/ma2005-02/13/494 ◽

2005 ◽

Keyword(s):

Metal Oxide ◽

Gate Dielectric ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High K ◽

High K Gate Dielectric

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HfTiAlO dielectric as an alternative high-k gate dielectric for the next generation of complementary metal-oxide-semiconductor devices

Applied Physics Letters ◽

10.1063/1.2396891 ◽

2007 ◽

Vol 90 (8) ◽

pp. 082911 ◽

Cited By ~ 18

Author(s):

N. Lu ◽

H.-J. Li ◽

J. J. Peterson ◽

D. L. Kwong

Keyword(s):

Metal Oxide ◽

Gate Dielectric ◽

Semiconductor Devices ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Next Generation ◽

High K ◽

High K Gate Dielectric

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Advanced high-k gate dielectric amorphous LaGdO3 gated metal-oxide-semiconductor devices with sub-nanometer equivalent oxide thickness

Applied Physics Letters ◽

10.1063/1.4805037 ◽

2013 ◽

Vol 102 (19) ◽

pp. 192904 ◽

Cited By ~ 13

Author(s):

S. P. Pavunny ◽

P. Misra ◽

R. Thomas ◽

A. Kumar ◽

J. Schubert ◽

...

Keyword(s):

Metal Oxide ◽

Gate Dielectric ◽

Semiconductor Devices ◽

Oxide Thickness ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Equivalent Oxide Thickness ◽

High K ◽

High K Gate Dielectric

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Characteristics of Thermally Oxidized-Ti as a High-k Gate Dielectric on SiC Metal-Oxide-Semiconductor Devices

ECS Transactions ◽

10.1149/1.2209253 ◽

2019 ◽

Vol 1 (5) ◽

pp. 33-40

Author(s):

Rajat Mahapatra ◽

Nipapan Poolamai ◽

Nick Wright ◽

Amit K. Chakraborty ◽

Karl S. Coleman ◽

...

Keyword(s):

Metal Oxide ◽

Gate Dielectric ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High K ◽

High K Gate Dielectric

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High-performance GaAs metal-oxide-semiconductor capacitor by using NbAlON as high-k gate dielectric

Applied Physics Letters ◽

10.1063/1.4979101 ◽

2017 ◽

Vol 110 (12) ◽

pp. 123506 ◽

Cited By ~ 5

Author(s):

L. N. Liu ◽

H. W. Choi ◽

J. P. Xu ◽

P. T. Lai

Keyword(s):

Metal Oxide ◽

High Performance ◽

Gate Dielectric ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High K ◽

Metal Oxide Semiconductor Capacitor ◽

High K Gate Dielectric

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Suppressed growth of unstable low-k GeOx interlayer in Ge metal-oxide-semiconductor capacitor with high-k gate dielectric by annealing in water vapor

Applied Physics Letters ◽

10.1063/1.2723074 ◽

2007 ◽

Vol 90 (16) ◽

pp. 163502 ◽

Cited By ~ 18

Author(s):

X. Zou ◽

J. P. Xu ◽

C. X. Li ◽

P. T. Lai

Keyword(s):

Water Vapor ◽

Metal Oxide ◽

Gate Dielectric ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High K ◽

Low K ◽

Metal Oxide Semiconductor Capacitor ◽

High K Gate Dielectric

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Alternative surface passivation on germanium for metal-oxide-semiconductor applications with high-k gate dielectric

Applied Physics Letters ◽

10.1063/1.1812835 ◽

2004 ◽

Vol 85 (18) ◽

pp. 4127-4129 ◽

Cited By ~ 99

Author(s):

Nan Wu ◽

Qingchun Zhang ◽

Chunxiang Zhu ◽

D. S. H. Chan ◽

M. F. Li ◽

...

Keyword(s):

Metal Oxide ◽

Surface Passivation ◽

Gate Dielectric ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High K ◽

High K Gate Dielectric

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Effects of La content in ZrLaON gate dielectric on the interfacial and electrical properties of GaAs metal-oxide-semiconductor devices

Semiconductor Science and Technology ◽

10.1088/1361-6641/aafc65 ◽

2019 ◽

Vol 34 (3) ◽

pp. 035027 ◽

Cited By ~ 1

Author(s):

Lu Liu ◽

Hanhan Lu ◽

Jingping Xu ◽

Pui-To Lai ◽

Wing-Man Tang

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Gate Dielectric ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Extra interface state generation enhanced by fluorine in tungsten‐polycided metal‐oxide‐semiconductor devices with nitrided oxide gate dielectric

Applied Physics Letters ◽

10.1063/1.114493 ◽

1995 ◽

Vol 67 (10) ◽

pp. 1456-1458 ◽

Cited By ~ 1

Author(s):

C. W. Chen ◽

Y. K. Fang ◽

G. Y. Lee ◽

J. C. Hsieh ◽

M. S. Liang

Keyword(s):

Metal Oxide ◽

Gate Dielectric ◽

Semiconductor Devices ◽

Interface State ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

State Generation

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Image Force Effect on Tunneling Current for Ultra Thin High-K Dielectric Material Al2O3 Based Metal Oxide Semiconductor Devices

Journal of Nanoelectronics and Optoelectronics ◽

10.1166/jno.2015.1812 ◽

2015 ◽

Vol 10 (5) ◽

pp. 645-648 ◽

Cited By ~ 16

Author(s):

N. P. Maity ◽

R. Maity ◽

R. K. Thapa ◽

S. Baishya

Keyword(s):

Metal Oxide ◽

Dielectric Material ◽

Semiconductor Devices ◽

Tunneling Current ◽

Image Force ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Force Effect ◽

High K ◽

High K Dielectric

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