scholarly journals High-performance GaAs metal-oxide-semiconductor capacitor by using NbAlON as high-k gate dielectric

2017 ◽  
Vol 110 (12) ◽  
pp. 123506 ◽  
Author(s):  
L. N. Liu ◽  
H. W. Choi ◽  
J. P. Xu ◽  
P. T. Lai
Keyword(s):  
Metal Oxide ◽  
High Performance ◽  
Gate Dielectric ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
High K ◽  
Metal Oxide Semiconductor Capacitor ◽  
High K Gate Dielectric

Alternative surface passivation on germanium for metal-oxide-semiconductor applications with high-k gate dielectric

2004 ◽  
Vol 85 (18) ◽  
pp. 4127-4129 ◽  
Author(s):  
Nan Wu ◽  
Qingchun Zhang ◽  
Chunxiang Zhu ◽  
D. S. H. Chan ◽  
M. F. Li ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Surface Passivation ◽  
Gate Dielectric ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
High K ◽  
High K Gate Dielectric

Characteristics of Thermally Oxidized-Ti as a High-k Gate Dielectric on SiC Metal-Oxide-Semiconductor Devices

2019 ◽  
Vol 1 (5) ◽  
pp. 33-40
Author(s):  
Rajat Mahapatra ◽  
Nipapan Poolamai ◽  
Nick Wright ◽  
Amit K. Chakraborty ◽  
Karl S. Coleman ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Gate Dielectric ◽  
Semiconductor Devices ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
High K ◽  
High K Gate Dielectric

Optimized Al-doped TiO2 gate insulator for metal-oxide-semiconductor capacitor on Ge substrate

2021 ◽  
Author(s):  
Dong Gun Kim ◽  
Cheol Hyun An ◽  
Sanghyeon Kim ◽  
Dae Seon Kwon ◽  
Junil Lim ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Leakage Current ◽  
Tio2 Film ◽  
Single Layer ◽  
Atomic Layer ◽  
Metal Oxide Semiconductor ◽  
Gate Insulator ◽  
Oxide Semiconductor ◽  
High K ◽  
Metal Oxide Semiconductor Capacitor

Atomic layer deposited TiO2- and Al2O3-based high-k gate insulator (GI) were examined for the Ge-based metal-oxide-semiconductor capacitor application. The single-layer TiO2 film showed a too high leakage current to be...

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