Springer Proceedings in Physics - Microscopy of Semiconducting Materials
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Published By Springer Berlin Heidelberg

9783540319146
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Efficient, room-temperature, near-band gap luminescence by gettering in ion implanted silicon

2006 ◽  
pp. 355-358 ◽  
Author(s):  
D J Stowe ◽  
K J Fraser ◽  
S A Galloway ◽  
S Senkader ◽  
R J Falster ◽  
...  
Keyword(s):  
Band Gap ◽  
Room Temperature ◽  
Ion Implanted

scholarly journals Quantum effects in band gap-modulated amorphous carbon superlattices

2006 ◽  
pp. 307-310 ◽  
Author(s):  
V Stolojan ◽  
P Moreau ◽  
M J Goringe ◽  
S Ravi P Silva
Keyword(s):  
Band Gap ◽  
Amorphous Carbon ◽  
Quantum Effects

Defect generation in high In and N content GaInNAs quantum wells: unfaulting of Frank dislocation loops

2006 ◽  
pp. 139-142
Author(s):  
M Herrera ◽  
D González ◽  
J G Lozano ◽  
M Hopkinson ◽  
M Gutierrez ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Dislocation Loops ◽  
N Content ◽  
Defect Generation

TEM characterization of magnetic Sm- and Co-nanocrystals in SiC

2006 ◽  
pp. 319-322
Author(s):  
J Biskupek ◽  
U Kaiser ◽  
H Lichte ◽  
A Lenk ◽  
G Pasold ◽  
...  
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Tem Characterization

Structural properties of GaN quantum dots

2006 ◽  
pp. 3-12
Author(s):  
B Daudin ◽  
J -L Rouvière ◽  
D Jalabert ◽  
J Coraux ◽  
V Favre-Nicolin ◽  
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Keyword(s):  
Quantum Dots ◽  
Structural Properties

Nanoanalysis of InAs/GaAs quantum dots using low-loss EELS spectra

2006 ◽  
pp. 259-262
Author(s):  
A M Sánchez ◽  
M H Gass ◽  
A J Papworth ◽  
R Beanland ◽  
V Drouot ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Low Loss
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