Electron emission properties of relaxation-induced traps in InAs/GaAs quantum dots and the effect of electronic band structure

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Author(s):  
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2016 ◽  
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Zhi-Gang Song ◽  
Sumanta Bose ◽  
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Shu-Shen Li

2019 ◽  
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pp. 4695-4716 ◽  
Author(s):  
Pravin Popinand Ingole

Probing absolute electronic energy levels in semiconductor quantum dots (Q-dots) is crucial for engineering their electronic band structure and hence for precise design of composite nano-structure based devices.


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pp. 1801668 ◽  
Author(s):  
Daniele Benetti ◽  
Daling Cui ◽  
Haiguang Zhao ◽  
Federico Rosei ◽  
Alberto Vomiero

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Vol 3 (7-12) ◽  
pp. 967-970
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