4.8% efficient poly(3-hexylthiophene)-fullerene derivative (1:0.8) bulk heterojunction photovoltaic devices with plasma treated AgO[sub x]/indium tin oxide anode modification

2008 ◽  
Vol 92 (1) ◽  
pp. 013306 ◽  
Author(s):  
Woo-Jun Yoon ◽  
Paul R. Berger
2010 ◽  
Vol 1270 ◽  
Author(s):  
A.A. Damitha T Adikaari ◽  
Joe Briscoe ◽  
Steve Dunn ◽  
David Carey ◽  
Ravi Silva

AbstractWe present a performance comparison of polythiophene/fullerene derivative bulk heterojunction solar cells fabricated on fluorinated tin oxide (FTO) and indium tin oxide (ITO) in the presence and absence of the commonly used poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS) hole extraction layer. From a potential commercial perspective the performance of cheaper and more readily available FTO compares well with the more expensive ITO in terms of measured device efficiency (FTO:2.8 % and ITO:3.1%). The devices show similar fill factors (FTO:63% and ITO:64%) with the same open circuit voltage of 0.6 V. The short circuit current density is lower for FTO devices at 7.5 mA/cm2 which compares with 8.0 mA/cm2 for ITO; a behaviour that is mainly attributed to the reduced optical transmission of the FTO layer. Importantly, these devices were part fabricated and wholly characterized under atmospheric conditions. The quoted device performance is the best reported for FTO based bulk heterojunction systems in the absence of the highly acidic PEDOT:PSS hole extraction layer, which is believed to degrade conductive oxides.


2014 ◽  
Vol 128 ◽  
pp. 330-334 ◽  
Author(s):  
Bobins Augustine ◽  
Rafal Sliz ◽  
Kimmo Lahtonen ◽  
Mika Valden ◽  
Risto Myllylä ◽  
...  

2011 ◽  
Vol 98 (25) ◽  
pp. 253303 ◽  
Author(s):  
Z. Q. Xu ◽  
J. Li ◽  
J. P. Yang ◽  
P. P. Cheng ◽  
J. Zhao ◽  
...  

2012 ◽  
Vol 209-211 ◽  
pp. 1719-1722
Author(s):  
Ming Guo Zhang ◽  
Nan Hai Sun

A thin Ag layer embedded between layers of zinc tin oxide (ZTO) are compared to cells using an indium tin oxide electrode was investigated for inverted organic bulk heterojunction solar cells employing a multilayer electrode. ZTO/Ag/ ZTO (ZAZ) electrode is the preparation at room temperature, a high transparency in the visible part of the spectrum, and a very low sheet resistance comparable to treated ITO without the need for any thermal post deposition treatment as it is necessary for ITO. The In-free ZAZ electrodes exhibit a favorable work function of 4.3 eV and are shown to allow for excellent electron extraction even without a further interlayer. This renders ZAZ a perfectly suited bottom electrode for inverted organic solar cells with simplified cell architecture.


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