4.8% efficient poly(3-hexylthiophene)-fullerene derivative (1:0.8) bulk heterojunction photovoltaic devices with plasma treated AgO[sub x]/indium tin oxide anode modification
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2003 ◽
Vol 11
(4)
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pp. 605
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2011 ◽
Vol 115
(45)
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pp. 22688-22694
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2014 ◽
Vol 128
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pp. 330-334
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2012 ◽
Vol 209-211
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pp. 1719-1722
2009 ◽
Vol 255
(6)
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pp. 3759-3763
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