Temperature sensitivity (T0) of tensile-strained GaAsP/(AlGa)As double-barrier separate confinement heterostructure laser diodes for 800 nm band

2008 ◽  
Vol 103 (11) ◽  
pp. 113109 ◽  
Author(s):  
Andrzej Maląg ◽  
Elżbieta Dąbrowska ◽  
Kacper Grodecki
Keyword(s):  
Temperature Sensitivity ◽  
Laser Diodes ◽  
Double Barrier ◽  
Heterostructure Laser

Cavity Parameters of ZnCdSe/ZnSe Single-Quantum-Well Separate-Confinement-Heterostructure Laser Diodes

1993 ◽  
Vol 32 (Part 2, No. 12A) ◽  
pp. L1750-L1752 ◽  
Author(s):  
Ayumu Tsujimura ◽  
Shigeo Yoshii ◽  
Shigeo Hayashi ◽  
Kazuhiro Ohkawa ◽  
Tsuneo Mitsuyu
Keyword(s):  
Quantum Well ◽  
Laser Diodes ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Heterostructure Laser

Native‐oxide coupled‐cavity AlxGa1−xAs‐GaAs quantum well heterostructure laser diodes

1991 ◽  
Vol 59 (22) ◽  
pp. 2838-2840 ◽  
Author(s):  
N. El‐Zein ◽  
F. A. Kish ◽  
N. Holonyak ◽  
A. R. Sugg ◽  
M. J. Ries ◽  
...  
Keyword(s):  
Quantum Well ◽  
Laser Diodes ◽  
Native Oxide ◽  
Heterostructure Laser ◽  
Coupled Cavity

High-Power Low Vertical Beam Divergence 800-nm-Band Double-Barrier-SCH GaAsP–(AlGa)As Laser Diodes

2006 ◽  
Vol 18 (15) ◽  
pp. 1582-1584 ◽  
Author(s):  
A. Malag ◽  
A. Jasik ◽  
M. Teodorczyk ◽  
A. Jagoda ◽  
A. Kozlowska
Keyword(s):  
High Power ◽  
Laser Diodes ◽  
Beam Divergence ◽  
Double Barrier ◽  
Vertical Beam

1/f noise in semiconductor heterostructure laser diodes

2001 ◽  
Author(s):  
Jung Il Lee ◽  
Il Ki Han ◽  
Won Jun Choi ◽  
Jean Brini ◽  
Alain Chovet
Keyword(s):  
Laser Diodes ◽  
Title 1 ◽  
Semiconductor Heterostructure ◽  
Heterostructure Laser
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