Pre-atomic layer deposition surface cleaning and chemical passivation of (100) In0.2Ga0.8As and deposition of ultrathin Al2O3 gate insulators

2008 ◽  
Vol 93 (5) ◽  
pp. 052911 ◽  
Author(s):  
Byungha Shin ◽  
Donghun Choi ◽  
James S. Harris ◽  
Paul C. McIntyre
Author(s):  
Abigail R. Meyer ◽  
Rohan P. Chaukulkar ◽  
Noemi Leick ◽  
William Nemeth ◽  
David L. Young ◽  
...  

2012 ◽  
Vol 187 ◽  
pp. 357-361 ◽  
Author(s):  
Bart Vermang ◽  
Aude Rothschild ◽  
Karine Kenis ◽  
Kurt Wostyn ◽  
Twan Bearda ◽  
...  

Thermal atomic layer deposition (ALD) of Al2O3 provides an adequate level of surface passivation for both p-type and n-type Si solar cells. To obtain the most qualitative and uniform surface passivation advanced cleaning development is required. The studied pre-deposition treatments include an HF (Si-H) or oxidizing (Si-OH) last step and finish with simple hot-air drying or more sophisticated Marangoni drying. To examine the quality and uniformity of surface passivation - after cleaning and Al2O3 deposition - carrier density imaging (CDI) and quasi-steady-state photo-conductance (QSSPC) are applied. A hydrophilic surface clean that leads to improved surface passivation level is found. Si-H starting surfaces lead to equivalent passivation quality but worse passivation uniformity. The hydrophilic surface clean is preferred because it is thermodynamically stable, enables higher and more uniform ALD growth and consequently exhibits better surface passivation uniformity.


2021 ◽  
Vol 3 (1) ◽  
pp. 59-71
Author(s):  
Degao Wang ◽  
Qing Huang ◽  
Weiqun Shi ◽  
Wei You ◽  
Thomas J. Meyer

Sign in / Sign up

Export Citation Format

Share Document