Proposals on Lower Thermal Budget Process for In-Ga-Zn-O Thin Film Transistor Using HfO2 Gate Insulators Prepared by Atomic-Layer Deposition at a Temperature of 150°C
Keyword(s):
2011 ◽
Vol 26
(8)
◽
pp. 085007
◽
Keyword(s):
2010 ◽
Vol 157
(2)
◽
pp. H214
◽
Keyword(s):
Keyword(s):
Keyword(s):
2019 ◽
Vol 11
(3)
◽
pp. 3169-3180
◽
2017 ◽
Vol 38
(10)
◽
pp. 1390-1393
◽
2016 ◽
Vol 56
◽
pp. 324-328
◽
Keyword(s):
Keyword(s):