Direct observation/characterization of spatial distribution of current leakage spots in zinc oxide/aluminum nitride thin film precursor field effect transistor structures using conducting atomic force microscopy

2008 ◽  
Vol 93 (9) ◽  
pp. 093510 ◽  
Author(s):  
Shirshendu Dey ◽  
Suhas M. Jejurikar ◽  
K. P. Adhi ◽  
C. V. Dharmadhikari
Keyword(s):  
Thin Film ◽  
Atomic Force Microscopy ◽  
Spatial Distribution ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Current Leakage ◽  
Force Microscopy ◽  
Atomic Force ◽  
Effect Transistor

scholarly journals A non-volatile resistive memory effect in 2,2′,6,6′-tetraphenyl-dipyranylidene thin films as observed in field-effect transistors and by conductive atomic force microscopy

RSC Advances ◽  
2017 ◽  
Vol 7 (6) ◽  
pp. 3336-3342 ◽  
Author(s):  
Marc Courté ◽  
Sandeep G. Surya ◽  
Ramesh Thamankar ◽  
Chao Shen ◽  
V. Ramgopal Rao ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Memory Effect ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Resistive Memory ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Atomic Force ◽  
Effect Transistor

A non-volatile resistive memory effect is observed in 2,2′,6,6′-tetraphenyldipyranylidene (DIPO-Ph4), a large planar quinoïd π-conjugated heterocycle, in a field-effect transistor (FET) configuration and by conductive atomic force microscopy (c-AFM).

Processing and characterization of LiNbO3 thin film for metal Ferroelectric Semiconductor field effect transistor (MFSFET) application

2001 ◽  
Vol 40 (1-5) ◽  
pp. 171-180 ◽  
Author(s):  
Xuguang Wang ◽  
Jie Zhu ◽  
Hongzhou Zhang ◽  
Tai-Chou Lee ◽  
Trinh Vo ◽  
...  
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor

Dual Quantum Dot Superlattice

2018 ◽  
Vol 27 (01n02) ◽  
pp. 1840003
Author(s):  
Barath Parthasarathy ◽  
Pial Mirdha ◽  
Jun Kondo ◽  
Faquir Jain
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Field Effect Transistor ◽  
Crystalline Silicon ◽  
Force Microscopy ◽  
Atomic Force ◽  
Effect Transistor ◽  
P Type ◽  
Dual Quantum

In this paper, we propose a structure using four layers of quantum dots on crystalline silicon. The quantum dots site-specifically self-assembled in the p-type material due to the electrostatic attraction. This quantum dot super lattice (QDSL) structure will be constructed using a mixed layer of Germanium (Ge) and Silicon (Si) dots. Atomic Force Microscopy results will show the accurate stack height formed from individual and multi stacked layers. This is the first novel characterization of 4 layers of 2 separate self assemblies. This was also applied to a quantum dot gate field effect transistor (QDG-FET).

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