A non-volatile resistive memory effect in 2,2′,6,6′-tetraphenyl-dipyranylidene thin films as observed in field-effect transistors and by conductive atomic force microscopy

A non-volatile resistive memory effect is observed in 2,2′,6,6′-tetraphenyldipyranylidene (DIPO-Ph4), a large planar quinoïd π-conjugated heterocycle, in a field-effect transistor (FET) configuration and by conductive atomic force microscopy (c-AFM).

Download Full-text

Correction: A non-volatile resistive memory effect in 2,2′,6,6′-tetraphenyl-dipyranylidene thin films as observed in field-effect transistors and by conductive atomic force microscopy

RSC Advances ◽

10.1039/c7ra90012k ◽

2017 ◽

Vol 7 (16) ◽

pp. 9772-9772

Author(s):

Marc Courté ◽

Sandeep G. Surya ◽

Ramesh Thamankar ◽

Chao Shen ◽

V. Ramgopal Rao ◽

...

Keyword(s):

Thin Films ◽

Atomic Force Microscopy ◽

Memory Effect ◽

Field Effect ◽

Field Effect Transistors ◽

Resistive Memory ◽

Conductive Atomic Force Microscopy ◽

Force Microscopy ◽

Atomic Force

Correction for ‘A non-volatile resistive memory effect in 2,2′,6,6′-tetraphenyl-dipyranylidene thin films as observed in field-effect transistors and by conductive atomic force microscopy’ by Marc Courté et al., RSC Adv., 2017, 7, 3336–3342.

Download Full-text

Direct observation/characterization of spatial distribution of current leakage spots in zinc oxide/aluminum nitride thin film precursor field effect transistor structures using conducting atomic force microscopy

Applied Physics Letters ◽

10.1063/1.2975374 ◽

2008 ◽

Vol 93 (9) ◽

pp. 093510 ◽

Cited By ~ 2

Author(s):

Shirshendu Dey ◽

Suhas M. Jejurikar ◽

K. P. Adhi ◽

C. V. Dharmadhikari

Keyword(s):

Thin Film ◽

Atomic Force Microscopy ◽

Spatial Distribution ◽

Field Effect ◽

Field Effect Transistor ◽

Current Leakage ◽

Force Microscopy ◽

Atomic Force ◽

Effect Transistor

Download Full-text

Back Cover: Identification of grain boundaries as degradation site in n-channel organic field-effect transistors determined via conductive atomic force microscopy (Phys. Status Solidi RRL 4/2016)

physica status solidi (RRL) - Rapid Research Letters ◽

10.1002/pssr.201670725 ◽

2016 ◽

Vol 10 (4) ◽

Author(s):

Sebastian Müller ◽

Roelf-Peter Baumann ◽

Thomas Geßner ◽

R. Thomas Weitz

Keyword(s):

Atomic Force Microscopy ◽

Grain Boundaries ◽

Field Effect ◽

Field Effect Transistors ◽

Organic Field Effect Transistors ◽

Conductive Atomic Force Microscopy ◽

Force Microscopy ◽

Back Cover ◽

Atomic Force

Download Full-text

A complementary-metal-oxide-semiconductor-field-effect-transistor-compatible atomic force microscopy tip fabrication process and integrated atomic force microscopy cantilevers fabricated with this process

Ultramicroscopy ◽

10.1016/s0304-3991(02)00077-3 ◽

2002 ◽

Vol 91 (1-4) ◽

pp. 9-20 ◽

Cited By ~ 6

Author(s):

Mizuki Ono ◽

Dirk Lange ◽

Oliver Brand ◽

Christoph Hagleitner ◽

Henry Baltes

Keyword(s):

Atomic Force Microscopy ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Force Microscopy ◽

Atomic Force ◽

Effect Transistor

Download Full-text

Identification of grain boundaries as degradation site in n-channel organic field-effect transistors determined via conductive atomic force microscopy

physica status solidi (RRL) - Rapid Research Letters ◽

10.1002/pssr.201600008 ◽

2016 ◽

Vol 10 (4) ◽

pp. 339-345 ◽

Cited By ~ 5

Author(s):

Sebastian Müller ◽

Roelf-Peter Baumann ◽

Thomas Geßner ◽

R. Thomas Weitz

Keyword(s):

Atomic Force Microscopy ◽

Grain Boundaries ◽

Field Effect ◽

Field Effect Transistors ◽

Organic Field Effect Transistors ◽

Conductive Atomic Force Microscopy ◽

Force Microscopy ◽

Atomic Force

Download Full-text

Fabrication and Characterization of Atomic Force Microscopy-Assisted Normally-Off AlGaN/GaN Heterostructure Field Effect Transistors

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2016.13688 ◽

2016 ◽

Vol 16 (12) ◽

pp. 12831-12834

Author(s):

Susanna Yu ◽

Jung-Ho Lee ◽

Sang-Mo Koo

Keyword(s):

Atomic Force Microscopy ◽

Field Effect ◽

Field Effect Transistors ◽

Force Microscopy ◽

Atomic Force ◽

Heterostructure Field Effect Transistors ◽

Fabrication And Characterization ◽

Gan Heterostructure

Download Full-text

Molecularly clean ionic liquid/rubrene single-crystal interfaces revealed by frequency modulation atomic force microscopy

Physical Chemistry Chemical Physics ◽

10.1039/c4cp06041e ◽

2015 ◽

Vol 17 (10) ◽

pp. 6794-6800 ◽

Cited By ~ 11

Author(s):

Yasuyuki Yokota ◽

Hisaya Hara ◽

Yusuke Morino ◽

Ken-ichi Bando ◽

Akihito Imanishi ◽

...

Keyword(s):

Atomic Force Microscopy ◽

Ionic Liquid ◽

Single Crystal ◽

Frequency Modulation ◽

Field Effect ◽

Field Effect Transistors ◽

Force Microscopy ◽

Atomic Force ◽

Clean Interface ◽

Crystal Interfaces

Frequency modulation atomic force microscopy was employed to show a molecularly clean interface between an ionic liquid and a rubrene single crystal for possible applications to electric double-layer field-effect transistors.

Download Full-text