Non-ohmic contact resistance and field-effect mobility in nanocrystalline silicon thin film transistors

2008 ◽  
Vol 93 (16) ◽  
pp. 163503 ◽  
Author(s):  
Arman Ahnood ◽  
Khashayar Ghaffarzadeh ◽  
Arokia Nathan ◽  
Peyman Servati ◽  
Flora Li ◽  
...  
Keyword(s):  
Thin Film ◽  
Contact Resistance ◽  
Ohmic Contact ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Nanocrystalline Silicon ◽  
Field Effect Mobility ◽  
Silicon Thin Film

Hydrogenation Effect of Amorphous Silicon Thin Film Transistors by Atmospheric Pressure CVD

1993 ◽  
Vol 297 ◽  
Author(s):  
Byung Chul Ahn ◽  
Jeong Hyun Kim ◽  
Dong Gil Kim ◽  
Byeong Yeon Moon ◽  
Kwang Nam Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Atmospheric Pressure ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Low Cost ◽  
Thin Film Transistor ◽  
Field Effect Mobility ◽  
Silicon Thin Film ◽  
Hydrogenation Effect

The hydrogenation effect was studied in the fabrication of amorphous silicon thin film transistor using APCVD technique. The inverse staggered type a-Si TFTs were fabricated with the deposited a-Si and SiO2 films by the atmospheric pressure (AP) CVD. The field effect mobility of the fabricated a-Si TFT is 0.79 cm2/Vs and threshold voltage is 5.4V after post hydrogenation. These results can be applied to make low cost a-Si TFT array using an in-line APCVD system.

Compressive Stressed P-Channel Polycrystalline-Silicon Thin-Film Transistors for High Field-Effect Mobility

2015 ◽  
Vol 36 (8) ◽  
pp. 793-795 ◽  
Author(s):  
Jae Hyo Park ◽  
Ki Hwan Seok ◽  
Hyung Yoon Kim ◽  
Sol Kyu Lee ◽  
Hee Jae Chae ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Field Effect ◽  
High Field ◽  
Field Effect Mobility ◽  
Silicon Thin Film

scholarly journals Contact Resistance in Nanocrystalline Silicon Thin-Film Transistors

2008 ◽  
Vol 55 (4) ◽  
pp. 973-977 ◽  
Author(s):  
I-Chun Cheng ◽  
Sigurd Wagner ◽  
Evelyne Vallat-Sauvain
Keyword(s):  
Thin Film ◽  
Contact Resistance ◽  
Thin Film Transistors ◽  
Nanocrystalline Silicon ◽  
Silicon Thin Film

scholarly journals Influence of active layer thickness, device architecture and degradation effects on the contact resistance in organic thin film transistors

2017 ◽  
Vol 30 (3) ◽  
pp. 46-50
Author(s):  
Cesar Adrian Pons Flores ◽  
Israel Mejía ◽  
Manuel Quevedo-Lopez ◽  
Clemente Alvarado Beltran ◽  
Luis Martín Reséndiz
Keyword(s):  
Thin Film ◽  
Contact Resistance ◽  
Active Layer ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Active Layer Thickness ◽  
Field Effect Mobility ◽  
Device Architecture ◽  
Order Of Magnitude ◽  
Top Contact

We analyze the influence of three combined effects on the contact resistance in organic- based thin film transistors: a) the active layer thickness, b) device architecture and c) semiconductor degradation. Transfer characteristics and parasitic series resistance were analyzed in devices with three different active layer thicknesses (50, 100 and 150 nm) using top contact (TC) and bottom contact (BC) thin film transistor (TFT) configurations. In both configurations, the lowest contact resistance (2.49 × 106 ?) and the highest field-effect mobility (4.8 × 10-2 cm2/V·s) was presented in devices with the thicker pentacene film. Top contact thin film transistors presented field-effect mobility values one order of magnitude higher (4.8 × 10-2 cm2/V·s) than bottom contact ones (1 × 10-3 cm2/V·s). Threshold voltage for top-contact thin film transistors was -3.1 V. After 2 months, performance in the devices degraded and presented an increase of one order of magnitude   (105 - 106 ?) for BC-TFTs and two orders of magnitude (106 - 108 ?) for TC-TFTs in contact resistance.

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