Compressive Stressed P-Channel Polycrystalline-Silicon Thin-Film Transistors for High Field-Effect Mobility

2015 ◽  
Vol 36 (8) ◽  
pp. 793-795 ◽  
Author(s):  
Jae Hyo Park ◽  
Ki Hwan Seok ◽  
Hyung Yoon Kim ◽  
Sol Kyu Lee ◽  
Hee Jae Chae ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Field Effect ◽  
High Field ◽  
Field Effect Mobility ◽  
Silicon Thin Film

Hydrogenation Effect of Amorphous Silicon Thin Film Transistors by Atmospheric Pressure CVD

1993 ◽  
Vol 297 ◽  
Author(s):  
Byung Chul Ahn ◽  
Jeong Hyun Kim ◽  
Dong Gil Kim ◽  
Byeong Yeon Moon ◽  
Kwang Nam Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Atmospheric Pressure ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Low Cost ◽  
Thin Film Transistor ◽  
Field Effect Mobility ◽  
Silicon Thin Film ◽  
Hydrogenation Effect

The hydrogenation effect was studied in the fabrication of amorphous silicon thin film transistor using APCVD technique. The inverse staggered type a-Si TFTs were fabricated with the deposited a-Si and SiO2 films by the atmospheric pressure (AP) CVD. The field effect mobility of the fabricated a-Si TFT is 0.79 cm2/Vs and threshold voltage is 5.4V after post hydrogenation. These results can be applied to make low cost a-Si TFT array using an in-line APCVD system.

P-channel Polycrystalline Silicon Thin Film Transistors on Steel Foil Substrates

2001 ◽  
Vol 664 ◽  
Author(s):  
Ming Wu ◽  
Sigurd Wagner
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Field Effect ◽  
Drain Current ◽  
Silicon Thin Film ◽  
Polysilicon Films ◽  
Source Voltage ◽  
Steel Substrates ◽  
Hydrogenated Amorphous

ABSTRACTWe fabricated self-aligned polycrystalline silicon (polysilicon) thin film transistors on flexible steel substrates. The polysilicon was formed by furnace crystallization of hydrogenated amorphous silicon at 950°C/20sec or 750°C/2min. The TFTs made from these polysilicon films have hole field effect mobilities in the linear regime of 22 cm2·V−1s−1 (950°C) and 14 cm2·V−1s−1 (750°C). The OFF current at 10 V drain-source voltage is 10−10A and the drain current ON/OFF ratio is ∼106.

Non-ohmic contact resistance and field-effect mobility in nanocrystalline silicon thin film transistors

2008 ◽  
Vol 93 (16) ◽  
pp. 163503 ◽  
Author(s):  
Arman Ahnood ◽  
Khashayar Ghaffarzadeh ◽  
Arokia Nathan ◽  
Peyman Servati ◽  
Flora Li ◽  
...  
Keyword(s):  
Thin Film ◽  
Contact Resistance ◽  
Ohmic Contact ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Nanocrystalline Silicon ◽  
Field Effect Mobility ◽  
Silicon Thin Film
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