Low frequency noise analysis on organic thin film transistors

Density of states in the channel bulk area of a-Si:H thin-film transistors (TFTs) was extracted by using low-frequency noise analysis. The drain current noise power spectral density shows 1/ƒγ behavior at relatively high frequencies (ƒ > 1 kHz), which is due to the exponential distribution of tail states. For the analysis, the modified number fluctuation model which is correlated with mobility fluctuation was used. From the relationship (γ=1- kT/Et ) between exponent γ and the slope of exponential distribution Et of band tail states, the distribution of the band tail near conduction band was extracted.

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Investigation of the Gate Bias Stress Instability in ZnO Thin Film Transistors by Low-Frequency Noise Analysis

Japanese Journal of Applied Physics ◽

10.7567/jjap.52.04cf04 ◽

2013 ◽

Vol 52 (4S) ◽

pp. 04CF04 ◽

Cited By ~ 1

Author(s):

Kwang-Seok Jeong ◽

Ho-Jin Yun ◽

Yu-Mi Kim ◽

Seung-Dong Yang ◽

Sang-Youl Lee ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Noise Analysis ◽

Low Frequency ◽

Frequency Noise ◽

Zno Thin Film ◽

Gate Bias ◽

Low Frequency Noise ◽

Bias Stress ◽

Gate Bias Stress

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Low frequency noise in amorphous silicon thin film transistors with SiNx gate dielectric

Journal of Applied Physics ◽

10.1063/1.3147928 ◽

2009 ◽

Vol 105 (12) ◽

pp. 124504 ◽

Cited By ~ 2

Author(s):

S. L. Rumyantsev ◽

Sung Hun Jin ◽

M. S. Shur ◽

Mun-Soo Park

Keyword(s):

Thin Film ◽

Amorphous Silicon ◽

Thin Film Transistors ◽

Gate Dielectric ◽

Low Frequency ◽

Frequency Noise ◽

Low Frequency Noise ◽

Silicon Thin Film

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1/f Noise Behavior in Pentacene Organic Thin Film Transistors

MRS Proceedings ◽

10.1557/proc-598-bb11.54 ◽

1999 ◽

Vol 598 ◽

Author(s):

P. V. Necliudov ◽

D. J. Gundlach ◽

T. N. Jackson ◽

S. L. Rumyantsev ◽

M. S. Shur

Keyword(s):

Thin Film ◽

Conducting Polymers ◽

Thin Film Transistors ◽

Low Frequency ◽

Drain Current ◽

Frequency Noise ◽

Organic Thin Film ◽

Amorphous Si ◽

Parameter Values ◽

Device Noise

ABSTRACTWe studied the low frequency noise in top-contact pentacene Thin Film Transistors (TFTs). The relative spectral noise density of the drain current fluctuations SI/I2 had a form of 1/f noise in the measured frequency range 1Hz - 3.5kHz.Our studies of the noise dependencies on the gate-source VGS and drain-source VDS voltages showed that the dependencies differed from those observed for conducting polymers and resembled those reported for crystalline Si n-MOSFETs.To compare the device noise level with those of other devices and materials, we extracted the Hooge parameter α. In order to calculate the total number of carriers we used a model simulating the device DC characteristics, similar to that for amorphous Si TFTs. The extracted Hooge parameter was 0.04. For an organic material this is an extremely small value, which is three orders of magnitude smaller that the Hooge parameter values reported for conducting polymers and only several times higher than the values for amorphous Si TFTs.

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