A new method for high-frequency characterization of patterned ferromagnetic thin films

ABSTRACTA combination of XRD and TEM techniques have been used to characterize the response of room temperature magnetron sputtered Fe-Pd thin films on Si-susbtrates to post-deposition order-annealing at temperatures between 400-500°C. Deposition produced the disordered Fe-Pd phase with (111)-twinned grains approximately 18nm in size. Ordering occurred for annealing at 450°C and 500°C after 1.8ks, accompanied by grain growth (40-70nm). The ordered FePd grains contained (111)-twins rather than {101}-twins typical of bulk ordered FePd. The metallic overlayers and underlayers selected here produced detrimental dissolution (Pt into Fe-Pd phases) and precipitation reactions between Pd and the Si substrate.

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High Frequency Ultrasound, a Tool for Elastic Properties Measurement of Thin Films Fabricated on Silicon

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.324.277 ◽

2011 ◽

Vol 324 ◽

pp. 277-281 ◽

Cited By ~ 6

Author(s):

Pierre Campistron ◽

Julien Carlier ◽

Nadine Saad ◽

Jamin Gao ◽

Malika Toubal ◽

...

Keyword(s):

Thin Films ◽

Elastic Properties ◽

High Frequency ◽

Shear Waves ◽

Thin Layers ◽

Acoustic Properties ◽

Frequency Range ◽

Frequency Method ◽

Longitudinal Waves

The main goal of this work is to develop an ultrasonic high frequency method for characterization of thin layers. The development of high frequency acoustic transducers for longitudinal waves and shear waves on silicon has enabeled the characterization of thin films deposited on this substrate. Three types of transducers have been achieved : (i) single crystal LiNbOSubscript text3 Y+163° for shear waves generation, and (ii) Y+36° for longitudinal waves, bonded and thinned on silicon substrate to achieve ultrasonic transducers in the frequency range 300-600 MHz ; (iii) thin films ZnO transducers were realized due to sputtering technologies working in the frequency range 1 GHz- 2.5 GHz. Using an inversion method and a network analyser which provide the scattering S11 parameter of the transducer versus the frequency we deduce the elastic properties of films deposited on the wafer surface. Thanks to these transducers the acoustic properties of thin films such as SU-8 based nanocomposites (doped with TiO2 , SrTiO3 or W nanoparticles) will be presented. In order to achieve mechanical impedance matching between silicon and water we control the mass of the embedded particles which provide a way to adjust the elastic properties of the characterized material. In another application an Indium metallic layer have been characterized in the high frequency range. We also use this method to characterize dielectric permittivity of the ZnO transducers.

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A new method for the characterization of the longitudinal and transverse strain sensitivities of conductive thin films for their use in microsensors

Proceedings of the Third International Workshop on Design of Mixed-Mode Integrated Circuits and Applications (Cat. No.99EX303) ◽

10.1109/mmica.1999.833599 ◽

2003 ◽

Author(s):

H.V. Estrada ◽

J.F. Estrada-Vazquez

Keyword(s):

Thin Films ◽

New Method ◽

Transverse Strain ◽

Conductive Thin Films

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Non-contact high-frequency measurements of mechanically loaded ferromagnetic thin films: An alternative approach for torque sensors

Sensors and Actuators A Physical ◽

10.1016/j.sna.2019.111788 ◽

2020 ◽

Vol 301 ◽

pp. 111788

Author(s):

S. Beirle ◽

K. Seemann

Keyword(s):

Thin Films ◽

High Frequency ◽

Frequency Measurements ◽

Ferromagnetic Thin Films ◽

Alternative Approach

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A New Method for Electrical Characterization of Ferroelectric Thin Films at Microwave Frequencies

Ferroelectrics ◽

10.1080/00150190701511823 ◽

2007 ◽

Vol 356 (1) ◽

pp. 153-157 ◽

Cited By ~ 3

Author(s):

Guru Subramanyam

Keyword(s):

Thin Films ◽

Electrical Characterization ◽

Ferroelectric Thin Films ◽

New Method ◽

Microwave Frequencies

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RF Magnetron Sputtered Ba0.96Ca0.04Ti0.84Zr0.16O3 Thin Films for High Frequency Applications

MRS Proceedings ◽

10.1557/proc-833-g1.2 ◽

2004 ◽

Vol 833 ◽

Author(s):

Ali Mahmud ◽

T. S. Kalkur ◽

N. Cramer

Keyword(s):

Thin Film ◽

Thin Films ◽

Dielectric Constant ◽

Substrate Temperature ◽

High Frequency ◽

Satellite Communications ◽

Ferroelectric Thin Films ◽

Paraelectric State ◽

Deposited Films

ABSTRACTPerovskite ferroelectric thin films in the paraelectric state exhibit outstanding dielectric properties, even at high frequencies (>1 GHz). The tunable dielectric constant of ferroelectric thin films can be used to design frequency and phase agile components. High dielectric constant thin film ferroelectric materials in the paraelectric state have received enormous attention due to their feasibility in applications such as decoupling capacitors and tunable microwave capacitors; the latter application has been fueled by the recent explosion in wireless and satellite communications. This paper reportsBa0.96Ca 0.04Ti0.84Zr0.16O3 (BCTZ) thin films that were deposited on Pt electrodes using radio frequency magnetron sputtering at a low (450 °C) substrate temperature. Sputtered thin film BCTZ at low substrate temperature is compatible with conventional integrated circuit technology. The structural characterization of the deposited films was performed by x-ray diffraction. The electrical characterization of the films was achieved by capacitance-voltage, current-voltage, and S-parameter (via vector network analyzer) measurements. In addition, the effect of post annealing on the deposited films was investigated. A detailed understanding of both their processing and material properties is discussed for successful implementation in high frequency applications.

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