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Thermally stable high effective work function TaCN thin films for metal gate electrode applications
Journal of Applied Physics
◽
10.1063/1.3078107
◽
2009
◽
Vol 105
(5)
◽
pp. 053516
◽
Cited By ~ 10
Author(s):
C. Adelmann
◽
J. Meersschaut
◽
L.-Å. Ragnarsson
◽
T. Conard
◽
A. Franquet
◽
...
Keyword(s):
Thin Films
◽
Work Function
◽
Thermally Stable
◽
Gate Electrode
◽
Metal Gate
◽
Effective Work
◽
Effective Work Function
Download Full-text
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References
Effective Work-Function Modulation by Aluminum-Ion Implantation for Metal-Gate Technology $(\hbox{Poly-Si/TiN/SiO}_{2})$
IEEE Electron Device Letters
◽
10.1109/led.2007.909852
◽
2007
◽
Vol 28
(12)
◽
pp. 1089-1091
◽
Cited By ~ 28
Author(s):
R. Singanamalla
◽
H. Y. Yu
◽
B. Van Daele
◽
S. Kubicek
◽
K. De Meyer
Keyword(s):
Ion Implantation
◽
Work Function
◽
Metal Gate
◽
Effective Work
◽
Effective Work Function
◽
Aluminum Ion
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Investigating doping effects on high-κ metal gate stack for effective work function engineering
Solid-State Electronics
◽
10.1016/j.sse.2013.04.011
◽
2013
◽
Vol 88
◽
pp. 21-26
◽
Cited By ~ 12
Author(s):
C. Leroux
◽
S. Baudot
◽
M. Charbonnier
◽
A. Van Der Geest
◽
P. Caubet
◽
...
Keyword(s):
Work Function
◽
Metal Gate
◽
Gate Stack
◽
Effective Work
◽
Effective Work Function
◽
Doping Effects
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Effective Work Function Engineering for Aggressively Scaled Planar and FinFET-based Devices with High-k Last Replacement Metal Gate Tech.
10.7567/ssdm.2012.d-1-2
◽
2012
◽
Author(s):
A. Veloso
◽
S. A. Chew
◽
Y. Higuchi
◽
L. A. Ragnarsson
◽
E. Simoen
◽
...
Keyword(s):
Work Function
◽
Metal Gate
◽
Effective Work
◽
Effective Work Function
◽
High K
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In depth analysis of dopant effect on high-k metal gate effective work function
2012 13th International Conference on Ultimate Integration on Silicon (ULIS)
◽
10.1109/ulis.2012.6193345
◽
2012
◽
Cited By ~ 1
Author(s):
C. Leroux
◽
S. Baudot
◽
M. Charbonnier
◽
A. Van Deer Geest
◽
P. Caubet
◽
...
Keyword(s):
Work Function
◽
Metal Gate
◽
Dopant Effect
◽
Effective Work
◽
Effective Work Function
◽
High K
◽
Depth Analysis
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The effect of oxygen in Ru gate electrode on effective work function of Ru/HfO2 stack structure
Materials Science in Semiconductor Processing
◽
10.1016/j.mssp.2006.10.013
◽
2006
◽
Vol 9
(6)
◽
pp. 975-979
◽
Cited By ~ 10
Author(s):
T. Nabatame
◽
K Segawa
◽
M. Kadoshima
◽
H. Takaba
◽
K. Iwamoto
◽
...
Keyword(s):
Work Function
◽
Gate Electrode
◽
Effective Work
◽
Effective Work Function
◽
Effect Of Oxygen
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Effective work-function control technique applicable to p-type FinFET high-k/metal gate devices
Microelectronics Reliability
◽
10.1016/j.microrel.2017.04.004
◽
2017
◽
Vol 72
◽
pp. 80-84
◽
Cited By ~ 1
Author(s):
Shimpei Yamaguchi
◽
Zeynel Bayindir
◽
Xiaoli He
◽
Suresh Uppal
◽
Purushothaman Srinivasan
◽
...
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Work Function
◽
Control Technique
◽
Metal Gate
◽
Effective Work
◽
Effective Work Function
◽
High K
◽
P Type
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Experimental study of the minimum metal gate thickness required to fix the effective work function in metal-oxide-semiconductor capacitors
Applied Physics Letters
◽
10.1063/1.2833697
◽
2008
◽
Vol 92
(2)
◽
pp. 023503
◽
Cited By ~ 10
Author(s):
F. Fillot
◽
S. Maîtrejean
◽
I. Matko
◽
B. Chenevier
Keyword(s):
Experimental Study
◽
Metal Oxide
◽
Work Function
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Metal Gate
◽
Effective Work
◽
Effective Work Function
Download Full-text
The effects of process condition of top-TiN and TaN thickness on the effective work function of MOSCAP with high-k/metal gate stacks
Journal of Semiconductors
◽
10.1088/1674-4926/35/10/106002
◽
2014
◽
Vol 35
(10)
◽
pp. 106002
◽
Cited By ~ 3
Author(s):
Xueli Ma
◽
Hong Yang
◽
Wenwu Wang
◽
Huaxiang Yin
◽
Huilong Zhu
◽
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Keyword(s):
Work Function
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Process Condition
◽
Gate Stacks
◽
Metal Gate
◽
Effective Work
◽
Effective Work Function
◽
High K
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An effective work-function tuning method of nMOSCAP with high-k/metal gate by TiN/TaN double-layer stack thickness
Journal of Semiconductors
◽
10.1088/1674-4926/35/9/096001
◽
2014
◽
Vol 35
(9)
◽
pp. 096001
◽
Cited By ~ 4
Author(s):
Xueli Ma
◽
Hong Yang
◽
Wenwu Wang
◽
Huaxiang Yin
◽
Huilong Zhu
◽
...
Keyword(s):
Work Function
◽
Double Layer
◽
Metal Gate
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Effective Work
◽
Effective Work Function
◽
Tuning Method
◽
High K
◽
Work Function Tuning
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Role of interface dipole in metal gate/high-k effective work function modulation by aluminum incorporation
Applied Physics Letters
◽
10.1063/1.3159830
◽
2009
◽
Vol 94
(25)
◽
pp. 252905
◽
Cited By ~ 19
Author(s):
Z. C. Yang
◽
A. P. Huang
◽
L. Yan
◽
Z. S. Xiao
◽
X. W. Zhang
◽
...
Keyword(s):
Work Function
◽
Metal Gate
◽
Effective Work
◽
Effective Work Function
◽
Interface Dipole
◽
High K
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