Temperature dependence of Ohmic contact characteristics in AlGaN/GaN high electron mobility transistors from −50 to 200 °C
2016 ◽
Vol 55
(4)
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pp. 040306
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2018 ◽
Vol 57
(4S)
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pp. 04FG02
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2017 ◽
1997 ◽
Vol 15
(5)
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pp. 1773
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2006 ◽
Vol 21
(2)
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pp. 175-179
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