Impact of Crystal Orientation on Ohmic Contact Resistance of Enhancement-Mode pGaN Gate High Electron Mobility Transistors on 200 mm Si Substrates

2017 ◽  
Author(s):  
M. Van Hove
Keyword(s):  
Contact Resistance ◽  
Ohmic Contact ◽  
Electron Mobility ◽  
Crystal Orientation ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Si Substrates ◽  
Enhancement Mode ◽  
Electron Mobility Transistors

Low ohmic‐contact resistance in AlGaN/GaN high electron mobility transistors with holes etching in ohmic region

2015 ◽  
Vol 51 (25) ◽  
pp. 2145-2147 ◽  
Author(s):  
Chong Wang ◽  
Yunlong He ◽  
Xuefeng Zheng ◽  
Mengdi Zhao ◽  
Minhan Mi ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Ohmic Contact ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

Ultralow nonalloyed Ohmic contact resistance to self aligned N-polar GaN high electron mobility transistors by In(Ga)N regrowth

2010 ◽  
Vol 96 (14) ◽  
pp. 143504 ◽  
Author(s):  
Sansaptak Dasgupta ◽  
Nidhi ◽  
David F. Brown ◽  
Feng Wu ◽  
Stacia Keller ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Ohmic Contact ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

Low nonalloyed Ohmic contact resistance to nitride high electron mobility transistors using N-face growth

2007 ◽  
Vol 91 (23) ◽  
pp. 232103 ◽  
Author(s):  
Man Hoi Wong ◽  
Yi Pei ◽  
Tomás Palacios ◽  
Likun Shen ◽  
Arpan Chakraborty ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Ohmic Contact ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

Tri-Gate Al0.2Ga0.8N/AlN/GaN HEMTs on SiC/Si-Substrates

2016 ◽  
Vol 858 ◽  
pp. 1174-1177 ◽  
Author(s):  
Wael Jatal ◽  
Uwe Baumann ◽  
Heiko O. Jacobs ◽  
Frank Schwierz ◽  
Jörg Pezoldt
Keyword(s):  
Electron Mobility ◽  
Drain Current ◽  
High Electron Mobility Transistors ◽  
Current Gain ◽  
High Electron ◽  
High Electron Mobility ◽  
Si Substrates ◽  
Enhancement Mode ◽  
Electron Mobility Transistors ◽  
Nanochannel Array

A nanochannel array structure was applied to realize enhancement-mode high electron mobility transistors based on AlGaN/AlN/GaN-heterostructures grown on Si substrates using a SiC transition layer. The fabricated nanochannel array HEMT, consisting of 78 channels connected in parallel with a channel width of 100 nm defined by electron-beam lithography and dry etching, shows a threshold voltage of 0.35 V. The high electron mobility transistors with LG= 0.2 μm had a maximum drain current density of 445 mA/mm and a peak extrinsic tranconductance of 235 mS/mm. A unity current gain cut-off frequency of 30 GHz and maximum oscillation frequency of 40 GHz were measured on these devices.

scholarly journals Gate Capacitance and Off-State Characteristics of E-Mode p-GaN Gate AlGaN/GaN High-Electron-Mobility Transistors After Gate Stress Bias

2021 ◽  
Author(s):  
Yu-Chen Lai ◽  
Yi-Nan Zhong ◽  
Ming-Yan Tsai ◽  
Yue-Ming Hsin
Keyword(s):  
Leakage Current ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Gate Capacitance ◽  
Enhancement Mode ◽  
Electron Mobility Transistors ◽  
Higher Power ◽  
State Capacitance

AbstractThis study investigated the gate capacitance and off-state characteristics of 650-V enhancement-mode p-GaN gate AlGaN/GaN high-electron-mobility transistors after various degrees of gate stress bias. A significant change was observed in the on-state capacitance when the gate stress bias was greater than 6 V. The corresponding threshold voltage exhibited a positive shift at low gate stress and a negative shift when the gate stress was greater than 6 V, which agreed with the shift observation from the I–V measurement. Moreover, the off-state leakage current increased significantly after the gate stress exceeded 6 V during the off-state characterization although the devices could be biased up to 1000 V without breakdown. The increase in the off-state leakage current would lead to higher power loss.

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