The role of Si orientation and temperature on the carrier mobility in metal oxide semiconductor field-effect transistors with ultrathin HfO2 gate dielectrics
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2004 ◽
Vol 33
(8)
◽
pp. 912-915
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2010 ◽
Vol 54
(9)
◽
pp. 919-924
◽
2007 ◽
Vol 46
(1)
◽
pp. 7-13
◽
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