The influence of the gate dielectrics on threshold voltage instability in amorphous indium-gallium-zinc oxide thin film transistors
2011 ◽
Vol 32
(1)
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pp. 42-44
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2011 ◽
Vol 42
(1)
◽
pp. 104-106
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Keyword(s):
2015 ◽
Vol 135
(6)
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pp. 192-198
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Keyword(s):
Keyword(s):