Defect properties of high-k/metal-gate metal–oxide–semiconductor field-effect transistors determined by characterization of random telegraph noise

Japanese Journal of Applied Physics ◽

10.7567/jjap.53.038005 ◽

2014 ◽

Vol 53 (3) ◽

pp. 038005

Author(s):

San-Lein Wu ◽

Hsu-Feng Chiu ◽

Yee-Shyi Chang ◽

Osbert Cheng

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Random Telegraph Noise ◽

High K ◽

Telegraph Noise

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Investigation of trap properties in high-k/metal gate p-type metal-oxide-semiconductor field-effect-transistors with aluminum ion implantation using random telegraph noise analysis

Applied Physics Letters ◽

10.1063/1.4893445 ◽

2014 ◽

Vol 105 (6) ◽

pp. 062109

Author(s):

Tsung-Hsien Kao ◽

Shoou-Jinn Chang ◽

Yean-Kuen Fang ◽

Po-Chin Huang ◽

Chien-Ming Lai ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Noise Analysis ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Random Telegraph Noise ◽

High K ◽

Telegraph Noise ◽

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Characterization of Oxide Traps in 28 nm n-Type Metal–Oxide–Semiconductor Field-Effect Transistors with Different Uniaxial Tensile Stresses Utilizing Random Telegraph Noise

Japanese Journal of Applied Physics ◽

10.7567/jjap.52.04cc24 ◽

2013 ◽

Vol 52 (4S) ◽

pp. 04CC24 ◽

Author(s):

Bo-Chin Wang ◽

San-Lein Wu ◽

Yu-Ying Lu ◽

Chien-Wei Huang ◽

Chung-Yi Wu ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Uniaxial Tensile ◽

Random Telegraph Noise ◽

Tensile Stresses ◽

Telegraph Noise

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Characterization of Oxide Tarps in 28 nm p-Type Metal–Oxide–Semiconductor Field-Effect Transistors with Tip-Shaped SiGe Source/Drain Based on Random Telegraph Noise

Japanese Journal of Applied Physics ◽

10.7567/jjap.51.02bc11 ◽

2012 ◽

Vol 51 (2S) ◽

pp. 02BC11 ◽

Author(s):

Bo Chin Wang ◽

San Lein Wu ◽

Chien Wei Huang ◽

Yu Ying Lu ◽

Shoou Jinn Chang ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Random Telegraph Noise ◽

Telegraph Noise ◽

P Type ◽

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Characterization of random telegraph noise in gate induced drain leakage current of n- and p-type metal-oxide-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.3292204 ◽

2010 ◽

Vol 96 (4) ◽

pp. 043502 ◽

Author(s):

Ju-Wan Lee ◽

Hyungcheol Shin ◽

Jong-Ho Lee

Keyword(s):

Metal Oxide ◽

Leakage Current ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Random Telegraph Noise ◽

Telegraph Noise ◽

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Characterization of Oxide Tarps in 28 nm p-Type Metal–Oxide–Semiconductor Field-Effect Transistors with Tip-Shaped SiGe Source/Drain Based on Random Telegraph Noise

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.02bc11 ◽

2012 ◽

Vol 51 (2) ◽

pp. 02BC11 ◽

Author(s):

Bo Chin Wang ◽

San Lein Wu ◽

Chien Wei Huang ◽

Yu Ying Lu ◽

Shoou Jinn Chang ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Random Telegraph Noise ◽

Telegraph Noise ◽

P Type ◽

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Triggering voltage for post-breakdown random telegraph noise in HfLaO dielectric metal gate metal-oxide-semiconductor field effect transistors and its reliability implications

Journal of Applied Physics ◽

10.1063/1.3676255 ◽

2012 ◽

Vol 111 (2) ◽

pp. 024101 ◽

Author(s):

W. H. Liu ◽

K. L. Pey ◽

N. Raghavan ◽

X. Wu ◽

M. Bosman

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Random Telegraph Noise ◽

Telegraph Noise

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Investigation of Trap Properties in High-k/Metal Gate p-Type Metal–Oxide–Semiconductor Field-Effect Transistors with SiGe Source/Drain Using Random Telegraph Noise Analysis

Applied Physics Express ◽

10.7567/apex.6.084201 ◽

2013 ◽

Vol 6 (8) ◽

pp. 084201

Author(s):

San-Lein Wu ◽

Kai-Shiang Tsai ◽

Osbert Cheng

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Noise Analysis ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Random Telegraph Noise ◽

High K ◽

Telegraph Noise ◽

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Accurate extraction of ΔI/I due to random telegraph noise in gate edge current of high-k n-type metal-oxide-semiconductor field-effect transistors under accumulation mode

Applied Physics Letters ◽

10.1063/1.3543901 ◽

2011 ◽

Vol 98 (2) ◽

pp. 023505 ◽

Author(s):

Ju-Wan Lee ◽

Chan Hyeong Park ◽

Hyungcheol Shin ◽

Byung-Gook Park ◽

Jong-Ho Lee

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Random Telegraph Noise ◽

Edge Current ◽

High K ◽

Telegraph Noise ◽

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Model of random telegraph noise in gate-induced drain leakage current of high-k gate dielectric metal-oxide-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.3678023 ◽

2012 ◽

Vol 100 (3) ◽

pp. 033501 ◽

Author(s):

Ju-Wan Lee ◽

Jong-Ho Lee

Keyword(s):

Metal Oxide ◽

Leakage Current ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Random Telegraph Noise ◽

High K ◽

Telegraph Noise

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Effect of La$_{2}$O$_{3}$ Capping Layer Thickness on Hot-Carrier Degradation of n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with High-$k$/Metal Gate Stacks

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.02bc10 ◽

2012 ◽

Vol 51 (2) ◽

pp. 02BC10

Author(s):

Dongwoo Kim ◽

Seonhaeng Lee ◽

Cheolgyu Kim ◽

Taekyung Oh ◽

Bongkoo Kang

Keyword(s):

Metal Oxide ◽

Layer Thickness ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Stacks ◽

Hot Carrier ◽

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