Threshold energy density for pulsed‐laser annealing of ion‐implanted silicon

1982 ◽  
Vol 53 (6) ◽  
pp. 4379-4388 ◽  
Author(s):  
D. Hoonhout ◽  
F. W. Saris
Keyword(s):  
Energy Density ◽  
Laser Annealing ◽  
Threshold Energy ◽  
Pulsed Laser ◽  
Threshold Energy Density ◽  
Pulsed Laser Annealing ◽  
Ion Implanted

Threshold Energy Density for Pulsed Laser Annealing of Silicon

1980 ◽  
Vol 1 ◽  
Author(s):  
Dick Hoonhout ◽  
Frans Saris
Keyword(s):  
Energy Density ◽  
Layer Thickness ◽  
Laser Annealing ◽  
Threshold Energy ◽  
Amorphous Layer ◽  
Systematic Investigation ◽  
Laser Wavelength ◽  
Threshold Energy Density ◽  
Pulsed Laser Annealing ◽  
Disordered Layer

ABSTRACTWe have made a systematic investigation of the threshold energy density for recrystallization of ion-implanted silicon by Q-switched laser irradiation as function of thickness of the disordered layer, temperature during implantation, type and dose of implanted impurity, laser wavelength, and substrate orientation. Most results have been obtained with a Q-switched ruby laser. A linear dependence of the threshold on layer thickness (in the region of 60–300 nm) was found for arsneic-implanted silicon, but not for silicon-implanted silicon. For an amorphous layer thickness of 200 nm we found very little dependence of the threshold on type of dopant. In the case of the Nd:YAG laser, however, the lowest threshold was observed for column VI elements, the highest for column IV elements and intermediate and equal thresholds for the elements from column III and B. The influence of temperature during implantation was found to be small, but the threshold appeared to be different for (100)- and (111)- oriented substrates.

Dynamic behaviors of pulsed-laser annealing in ion-implanted silicon studied by measuring the optical reflectance

1979 ◽  
Author(s):  
Kouichi Murakami ◽  
Kenji Gamo ◽  
Susumu Namba ◽  
Mitsuo Kawabe ◽  
Yoshinobu Aoyagi ◽  
...  
Keyword(s):  
Laser Annealing ◽  
Pulsed Laser ◽  
Optical Reflectance ◽  
Dynamic Behaviors ◽  
Pulsed Laser Annealing ◽  
Ion Implanted

Photoluminescence of Pulsed Ruby Laser Annealed Crystalline and Ion Implanted GaAs

1981 ◽  
Vol 4 ◽  
Author(s):  
Douglas H. Lowndes ◽  
Bernard J. Feldman
Keyword(s):  
Radiative Recombination ◽  
Laser Annealing ◽  
Laser Energy ◽  
Pulsed Laser ◽  
High Dose ◽  
Pulsed Laser Annealing ◽  
Recombination Centers ◽  
Pl Intensity ◽  
P Type ◽  
Ion Implanted

ABSTRACTIn an effort to understand the origin of defects earlier found to be present in p–n junctions formed by pulsed laser annealing (PLA) of ion implanted (II) semiconducting GaAs, photoluminescence (PL) studies have been carried out. PL spectra have been obtained at 4K, 77K and 300K, for both n–and p–type GaAs, for laser energy densities 0 ≤ El ≤ 0.6 J/cm2. It is found that PLA of crystalline (c−) GaAs alters the PL spectrum and decreases the PL intensity, corresponding to an increase in density of non-radiative recombination centers with increasing El. The variation of PL intensity with El is found to be different for n– and p–type material. No PL is observed from high dose (1 or 5×1015 ions/cm2 ) Sior Zn-implanted GaAs, either before or after laser annealing. The results suggest that the ion implantation step is primarily responsible for formation of defects associated with the loss of radiative recombination, with pulsed annealing contributing only secondarily.

scholarly journals Pulsed Laser Annealing of Ion Implanted Si

1979 ◽  
Vol 7 (2) ◽  
pp. 152-160
Author(s):  
Kouichi MURAKAMI ◽  
Eiji IKAWA ◽  
A. H. ORABY ◽  
Kenji GAMO ◽  
Susumu NAMBA ◽  
...  
Keyword(s):  
Laser Annealing ◽  
Pulsed Laser ◽  
Pulsed Laser Annealing ◽  
Ion Implanted

Pulsed laser annealing of ion implanted silicon

1979 ◽  
Author(s):  
J. Stephen ◽  
B. J. Smith ◽  
N. G. Blamires
Keyword(s):  
Laser Annealing ◽  
Pulsed Laser ◽  
Pulsed Laser Annealing ◽  
Ion Implanted

Pulsed Excimer Laser Processing of AlN/GaN Thin Films

1996 ◽  
Vol 449 ◽  
Author(s):  
W. S. Wong ◽  
L. F. Schloss ◽  
G.S. Sudhir ◽  
B. P. Linder ◽  
K-M. Yu ◽  
...  
Keyword(s):  
Thin Films ◽  
Energy Density ◽  
Excimer Laser ◽  
Laser Processing ◽  
Laser Annealing ◽  
Rutherford Backscattering Spectrometry ◽  
Pulsed Laser ◽  
Emission Peak ◽  
Dopant Activation ◽  
Pulsed Laser Annealing

ABSTRACTA KrF (248 nm) excimer laser with a 38 ns pulse width was used to study pulsed laser annealing of AIN/GaN bi-layers and dopant activation of Mg-implanted GaN thin films. For the AIN/GaN bi-layers, cathodoluminescence (CL) showed an increase in the intensity of the GaN band-edge peak at 3.47 eV after pulsed laser annealing at an energy density of 2000 mJ/cm2. Rutherford backscattering spectrometry of a Mg-implanted A1N (75 nm thick)/GaN (1.0 μm thick) thin-film heterostructure showed a 20% reduction of the 4He+ backscattering yield after laser annealing at an energy density of 400 mJ/cm2. CL measurements revealed a 410 nm emission peak indicating the incorporation of Mg after laser processing.

Formation of Q-carbon by adjusting sp3 content in diamond-like carbon films and laser energy density of pulsed laser annealing

Carbon ◽  
2020 ◽  
Vol 167 ◽  
pp. 504-511 ◽  
Author(s):  
Hiroki Yoshinaka ◽  
Seiko Inubushi ◽  
Takanori Wakita ◽  
Takayoshi Yokoya ◽  
Yuji Muraoka
Keyword(s):  
Energy Density ◽  
Laser Annealing ◽  
Laser Energy ◽  
Pulsed Laser ◽  
Carbon Films ◽  
Laser Energy Density ◽  
Diamond Like Carbon ◽  
Pulsed Laser Annealing

Residual Defects after Pulsed Laser Annealing of Ion implanted Silicon

1980 ◽  
Vol 2 ◽  
Author(s):  
A. Mesli ◽  
J.C. Muller ◽  
D. Salles ◽  
P. Siffert
Keyword(s):  
Laser Annealing ◽  
Pulsed Laser ◽  
Dopant Distribution ◽  
Common View ◽  
Pulsed Laser Annealing ◽  
Laser Effect ◽  
The Common ◽  
Transient Spectroscopy ◽  
Capacitance Transient ◽  
Ion Implanted

ABSTRACTCapacitance transient spectroscopy has been used to investigate the electrically active defects subsisting, after a ruby laser pulse annealing, in ion implanted silicon. In contrast to the common view, it is shown that the identified point defects are related to residual implantation related defects buried beyond the dopant distribution and not to the laser effect.

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