Photoluminescence of Pulsed Ruby Laser Annealed Crystalline and Ion Implanted GaAs

1981 ◽  
Vol 4 ◽  
Author(s):  
Douglas H. Lowndes ◽  
Bernard J. Feldman
Keyword(s):  
Radiative Recombination ◽  
Laser Annealing ◽  
Laser Energy ◽  
Pulsed Laser ◽  
High Dose ◽  
Pulsed Laser Annealing ◽  
Recombination Centers ◽  
Pl Intensity ◽  
P Type ◽  
Ion Implanted

ABSTRACTIn an effort to understand the origin of defects earlier found to be present in p–n junctions formed by pulsed laser annealing (PLA) of ion implanted (II) semiconducting GaAs, photoluminescence (PL) studies have been carried out. PL spectra have been obtained at 4K, 77K and 300K, for both n–and p–type GaAs, for laser energy densities 0 ≤ El ≤ 0.6 J/cm2. It is found that PLA of crystalline (c−) GaAs alters the PL spectrum and decreases the PL intensity, corresponding to an increase in density of non-radiative recombination centers with increasing El. The variation of PL intensity with El is found to be different for n– and p–type material. No PL is observed from high dose (1 or 5×1015 ions/cm2 ) Sior Zn-implanted GaAs, either before or after laser annealing. The results suggest that the ion implantation step is primarily responsible for formation of defects associated with the loss of radiative recombination, with pulsed annealing contributing only secondarily.

Pulsed laser annealing of high-dose Ag+-ion implanted Si layer

2017 ◽  
Vol 51 (1) ◽  
pp. 015109 ◽  
Author(s):  
R I Batalov ◽  
V I Nuzhdin ◽  
V F Valeev ◽  
V V Vorobev ◽  
Yu N Osin ◽  
...  
Keyword(s):  
Laser Annealing ◽  
Pulsed Laser ◽  
High Dose ◽  
Pulsed Laser Annealing ◽  
Ion Implanted

Dynamic behaviors of pulsed-laser annealing in ion-implanted silicon studied by measuring the optical reflectance

1979 ◽  
Author(s):  
Kouichi Murakami ◽  
Kenji Gamo ◽  
Susumu Namba ◽  
Mitsuo Kawabe ◽  
Yoshinobu Aoyagi ◽  
...  
Keyword(s):  
Laser Annealing ◽  
Pulsed Laser ◽  
Optical Reflectance ◽  
Dynamic Behaviors ◽  
Pulsed Laser Annealing ◽  
Ion Implanted

Formation of Sic, Si3N4 and SiO2 by High-Dose Ion Implantation and Laser Annealing

1980 ◽  
Vol 1 ◽  
Author(s):  
S.W. Chiang ◽  
Y.S. Liu ◽  
R.F. Reihl
Keyword(s):  
Ion Implantation ◽  
Polycrystalline Silicon ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
High Dose ◽  
Pulsed Laser Annealing ◽  
Transmission Electron ◽  
A Cell ◽  
Ft Ir ◽  
Ft Ir Spectroscopy

ABSTRACTHigh-dose ion implantation (1017 ions-cm−2) of C+, N+, and O+ at 50 KeV into silicon followed by pulsed laser annealing at 1.06 μm was studied. Formation of SiC, Si3N4, and SiO2 has been observed and investigated using Transmission Electron Microscopy (TEM) and Differential Fourier-Transform Infrared (FT-IR) Spectroscopy. Furthermore, in N+-implanted and laser-annealed silicon samples, we have observed a cell-like structure which has been identified to be spheroidal polycrystalline silicon formed by the rapid laser irradiation.

scholarly journals Pulsed Laser Annealing of Ion Implanted Si

1979 ◽  
Vol 7 (2) ◽  
pp. 152-160
Author(s):  
Kouichi MURAKAMI ◽  
Eiji IKAWA ◽  
A. H. ORABY ◽  
Kenji GAMO ◽  
Susumu NAMBA ◽  
...  
Keyword(s):  
Laser Annealing ◽  
Pulsed Laser ◽  
Pulsed Laser Annealing ◽  
Ion Implanted

Pulsed laser annealing of ion implanted silicon

1979 ◽  
Author(s):  
J. Stephen ◽  
B. J. Smith ◽  
N. G. Blamires
Keyword(s):  
Laser Annealing ◽  
Pulsed Laser ◽  
Pulsed Laser Annealing ◽  
Ion Implanted

Formation of Q-carbon by adjusting sp3 content in diamond-like carbon films and laser energy density of pulsed laser annealing

Carbon ◽  
2020 ◽  
Vol 167 ◽  
pp. 504-511 ◽  
Author(s):  
Hiroki Yoshinaka ◽  
Seiko Inubushi ◽  
Takanori Wakita ◽  
Takayoshi Yokoya ◽  
Yuji Muraoka
Keyword(s):  
Energy Density ◽  
Laser Annealing ◽  
Laser Energy ◽  
Pulsed Laser ◽  
Carbon Films ◽  
Laser Energy Density ◽  
Diamond Like Carbon ◽  
Pulsed Laser Annealing

Nonmelt Laser Annealing of 1 Kev Boron Implanted Silicon

2001 ◽  
Vol 669 ◽  
Author(s):  
Susan Earles ◽  
Mark Law ◽  
Kevin Jones ◽  
Somit Talwar ◽  
Sean Corcoran
Keyword(s):  
Laser Annealing ◽  
Laser Energy ◽  
High Dose ◽  
Ramp Rate ◽  
Dopant Activation ◽  
Pulsed Laser Annealing ◽  
Transmission Electron ◽  
Ultra Shallow Junctions ◽  
Defect Nucleation ◽  
Probe Measurements

ABSTRACTHeavily-doped, ultra-shallow junctions in boron implanted silicon using pulsed laser annealing have been created. Laser energy in the nonmelt regime has been supplied to the silicon surface at a ramp rategreater than 1010°C/sec. This rapid ramp rate will help decrease dopant diffusion while supplying enough energy to the surface to produce dopant activation. High-dose, non-amorphizing 1 keV, 1e15 ions/cm2 boron is used. Four-point probe measurements (FPP) show a drop in sheet resistance withnonmelt laser annealing (NLA) alone. Transmission electron microscopy (TEM) shows the NLA dramatically affects the defect nucleation resulting in fewer defects with post annealing. Hall mobility and secondary ion mass spectroscopy (SIMS) results are also shown.

Residual Defects after Pulsed Laser Annealing of Ion implanted Silicon

1980 ◽  
Vol 2 ◽  
Author(s):  
A. Mesli ◽  
J.C. Muller ◽  
D. Salles ◽  
P. Siffert
Keyword(s):  
Laser Annealing ◽  
Pulsed Laser ◽  
Dopant Distribution ◽  
Common View ◽  
Pulsed Laser Annealing ◽  
Laser Effect ◽  
The Common ◽  
Transient Spectroscopy ◽  
Capacitance Transient ◽  
Ion Implanted

ABSTRACTCapacitance transient spectroscopy has been used to investigate the electrically active defects subsisting, after a ruby laser pulse annealing, in ion implanted silicon. In contrast to the common view, it is shown that the identified point defects are related to residual implantation related defects buried beyond the dopant distribution and not to the laser effect.

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