Defect states in plastically deformedp‐type silicon crystals investigated by the Hall effect

1983 ◽  
Vol 54 (8) ◽  
pp. 4426-4432 ◽  
Author(s):  
Haruhiko Ono ◽  
Koji Sumino
Keyword(s):  
Hall Effect ◽  
Defect States ◽  
Type Silicon ◽  
Silicon Crystals

Laser-Tuned Large Photo Hall Effect in p-Type Silicon Based on Surface States

2020 ◽  
Vol 2 (4) ◽  
pp. 906-912
Author(s):  
Diyuan Zheng ◽  
Xinyuan Dong ◽  
Jing Lu ◽  
Anhua Dong ◽  
Yiru Niu ◽  
...  
Keyword(s):  
Hall Effect ◽  
Surface States ◽  
Type Silicon ◽  
P Type ◽  
Silicon Based

Evaluation of Hole Traps in 10-MeV Proton-Irradiated p-Type Silicon from Hall-Effect Measurements

1998 ◽  
Vol 37 (Part 1, No. 11) ◽  
pp. 6034-6040 ◽  
Author(s):  
Hideharu Matsuura ◽  
Yoshitsugu Uchida ◽  
Tadashi Hisamatsu ◽  
Sumio Matsuda
Keyword(s):  
Hall Effect ◽  
Type Silicon ◽  
Hall Effect Measurements ◽  
P Type

The characterization of pure and niobium-doped crystals of strontium titanate using Hall, electrical conductivity, and optical absorption data

1978 ◽  
Vol 56 (4) ◽  
pp. 453-467 ◽  
Author(s):  
G. Perluzzo ◽  
J. Destry
Keyword(s):  
Heat Treatment ◽  
Electrical Conductivity ◽  
Optical Absorption ◽  
Hall Effect ◽  
Strontium Titanate ◽  
Defect States ◽  
Absorption Data ◽  
Niobium Doped ◽  
Hall Effect Measurements

A description is given of the heat treatment, under controlled conditions, of crystals of strontium titanate, both pure and niobium-doped, and of the effect of this treatment on the defect states in this material. Our analysis is based on evaluation of the results of electrical conductivity and Hall effect measurements, and those of optical absorption.

Grown-in microdefects and photovoltaic characteristics of heavily Ge co-doped Czochralski-grown p-type silicon crystals

2013 ◽  
Vol 69 (9) ◽  
pp. 686-689 ◽  
Author(s):  
Mukannan Arivanandhan ◽  
Raira Gotoh ◽  
Kozo Fujiwara ◽  
Satoshi Uda ◽  
Yasuhiro Hayakawa ◽  
...  
Keyword(s):  
Type Silicon ◽  
Silicon Crystals ◽  
P Type ◽  
Photovoltaic Characteristics ◽  
Co Doped

scholarly journals Influence of light intensity on the lifetime of carriers in silicon investigated by a photoacoustic method

2016 ◽  
Vol 24 (2) ◽  
Author(s):  
L. Bychto ◽  
M. Maliński
Keyword(s):  
Light Intensity ◽  
Measurement Method ◽  
Experimental Results ◽  
Low Intensity ◽  
Photoacoustic Method ◽  
Type Silicon ◽  
Silicon Crystals

AbstractThe paper presents experimental results of the lifetime of light induced excess carriers in the n−type silicon. The lifetimes of carriers of silicon crystals were analysed as a function of the intensity of light illuminating the sample. As a measurement method of the lifetime of carriers, the photoacoustic method in a transmission configuration with different surfaces was used. The dependence character was next analysed in the frame of the Shockley Reed Hall statistics in approximation of the light low intensity.

Piezoresistance and Piezo-Hall-Effect inn-Type Silicon

1963 ◽  
Vol 130 (5) ◽  
pp. 1667-1670 ◽  
Author(s):  
J. E. Aubrey ◽  
W. Gubler ◽  
T. Henningsen ◽  
S. H. Koenig
Keyword(s):  
Hall Effect ◽  
Type Silicon
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