Potential barrier model incorporating localized states explaining tunnel anomalies

1985 ◽  
Vol 58 (3) ◽  
pp. 1320-1325 ◽  
Author(s):  
J. Halbritter
Keyword(s):  
Potential Barrier ◽  
Localized States ◽  
Barrier Model

The use of a new potential barrier model in the Fowler-Nordheim theory of field emission

1965 ◽  
Vol 3 (1) ◽  
pp. 71-94 ◽  
Author(s):  
P.H. Cutler ◽  
D. Nagy
Keyword(s):  
Field Emission ◽  
Potential Barrier ◽  
Barrier Model

O-Ru(0001) Surface Bond and Band Formation

1998 ◽  
Vol 05 (02) ◽  
pp. 465-471 ◽  
Author(s):  
Chang Q. Sun
Keyword(s):  
Dipole Moment ◽  
Potential Barrier ◽  
Ion Pairing ◽  
Charge Redistribution ◽  
Band Formation ◽  
Layer Spacing ◽  
Barrier Model ◽  
Surface Bond

Incorporating the bond-to-band and the potential barrier model [J. Phys. Chem. Solids58, 903 (1997); J. Phys.: Cond. Matt.27, 5823 (1997)] into the existing database reveals that the O-Ru(0001) triphase results from the formation of O -1, hybridized O -2 and the addition of a virtual bond, respectively. Oxygen is located at the center of a tetrahedron, forming a Ru 4 O cluster. Initially (<1/4 ML), the Ru 4 O ( O -1+ Ru ++ 3Ru dipole) forms, retaining C 3v symmetry. Then (1/2 ML), the Ru 4 O develops into a Ru 2 O ( O -2+ 2Ru + + 2Ru dipoles) by forming another bond with a surface Ru atom; as a result, a dipole-ion pairing row forms. Finally (1.0 ML), a virtual bond [2Ru(dipoles)+] forms by redistributing the dipole electrons; this process not only reduces the dipole moment but also narrows the antibond subband. The first layer spacing depends upon bond geometry and the second layer spacing contracts due to charge redistribution.

A new potential barrier model in epoxy resin nanodielectrics

2011 ◽  
Vol 18 (5) ◽  
pp. 1535-1543 ◽  
Author(s):  
Shengtao Li ◽  
Guilai Yin ◽  
Suna Bai ◽  
Jianying Li
Keyword(s):  
Epoxy Resin ◽  
Potential Barrier ◽  
Barrier Model

Linear Potential Barrier Model for Nuclear Surface

1961 ◽  
Vol 16 (4) ◽  
pp. 844-845 ◽  
Author(s):  
Tutomu Inoue
Keyword(s):  
Potential Barrier ◽  
Linear Potential ◽  
Nuclear Surface ◽  
Barrier Model

The effect of negative capacitance in varistor structure on the basis of its models with voltage drop on the intergranular interlayer

2015 ◽  
Vol 11 (4) ◽  
pp. 598-615 ◽  
Author(s):  
Alexander Sergeevich Tonkoshkur ◽  
Alexander Vladimirovich Ivanchenko
Keyword(s):  
Conduction Band ◽  
Potential Barrier ◽  
Voltage Drop ◽  
Voltage Characteristic ◽  
Localized States ◽  
Negative Capacitance ◽  
Nonlinear Conductivity ◽  
Content Type ◽  
Wide Range ◽  
Capacitance Voltage

Purpose – The purpose of this paper is modeling the effect of negative capacitance in the capacitance-voltage characteristic of the intergranular potential barrier of varistor structure. Design/methodology/approach – The modeling of the capacitance-voltage characteristic of the intergranular barrier in metal oxide varistor ceramics is based on the development of the algorithm. It includes all the known mechanisms of electrotransfer in a wide range of voltages and currents, and also takes into account the voltage drop on the intergranular interlayer of intergranular potential barrier. Findings – The models and algorithms for calculating the capacitance-voltage characteristics of a single intergranular potential barrier with the use of the most established understanding used at the interpretation of the nonlinear conductivity intergranular barrier are developed. The results of the capacitance-voltage characteristics modeling correspond to the existing understanding of the electrical properties on the ac current varistor ceramics are based on zinc oxide. The model allows to predict the behavior of varistors on the alternating current (voltage). Originality/value – It is established that the recharge of the surface localized states occurs when a voltage is applied to the varistor structure, it can lead to a relaxation decrease in the width of the potential barrier overcome by tunneling electrons in the field emission from the conduction band of the one crystallite in the conduction band of the other crystallite and thus to the current backlog of applied voltage on the phase (i.e. the expression of the negative capacitance effect).

One-dimensional potential barrier model of protein folding with intermediates

2002 ◽  
Vol 116 (1) ◽  
pp. 418 ◽  
Author(s):  
Bokkyoo Jun ◽  
David L. Weaver
Keyword(s):  
Protein Folding ◽  
Potential Barrier ◽  
One Dimensional ◽  
Barrier Model

Charge Transfer Potential Barrier Model of a Pinned Photodiode in CMOS Image Sensors

2021 ◽  
pp. 1-1
Author(s):  
Xiuyu Wang ◽  
Yingqiao Gao ◽  
Zhiyuan Gao ◽  
Jiangtao Xu
Keyword(s):  
Charge Transfer ◽  
Potential Barrier ◽  
Image Sensors ◽  
Cmos Image Sensors ◽  
Barrier Model ◽  
Transfer Potential ◽  
Pinned Photodiode

Potential-barrier model at metal surfaces: Thin films and its dependence on the film thickness

1994 ◽  
Vol 52 (3) ◽  
pp. 617-627
Author(s):  
E. E. Mola ◽  
C. A. Paola ◽  
J. L. Vicente
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Potential Barrier ◽  
Metal Surfaces ◽  
Barrier Model
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