Kinetics of the silicon dioxide growth process in afterglows of microwave‐induced plasmas

1987 ◽  
Vol 62 (4) ◽  
pp. 1450-1458 ◽  
Author(s):  
C. Vinckier ◽  
P. Coeckelberghs ◽  
G. Stevens ◽  
M. Heyns ◽  
S. De Jaegere
Keyword(s):  
Silicon Dioxide ◽  
Growth Process ◽  
Kinetics Of

Correlations for Interaction Layer Growth in U-Mo/Al Dispersion Fuels

2017 ◽  
Vol 375 ◽  
pp. 29-39
Author(s):  
Boris A. Tarasov ◽  
Stepan N. Nikitin ◽  
Dmitry P. Shornikov ◽  
Maria S. Tarasova ◽  
Igor I. Konovalov
Keyword(s):  
Growth Rate ◽  
Growth Process ◽  
Aluminum Matrix ◽  
Layer Growth ◽  
Radiation Diffusion ◽  
Fission Rate ◽  
Interaction Layer ◽  
The Matrix ◽  
Mechanism And Kinetics ◽  
Kinetics Of

Paper presents the results of the growth rate of the interaction layer of uranium-molybdenum dispersed fuel in aluminum matrix and influence of silicon alloying on it. The growth process of amorphous interaction layer depends on the radiation diffusion which is proportional to the fission rate in the power of 1⁄4. The alloying of the matrix by silicon does not lead to a change in the mechanism and kinetics of the interaction layer growth, but only slows it down.

The kinetics of Ge lateral overgrowth on SiO2

MRS Advances ◽  
2015 ◽  
Vol 1 (23) ◽  
pp. 1703-1708 ◽  
Author(s):  
M. Yako ◽  
N. J. Kawai ◽  
Y. Mizuno ◽  
K. Wada
Keyword(s):  
Growth Kinetics ◽  
Growth Rates ◽  
Growth Process ◽  
Theoretical Calculations ◽  
Film Formation ◽  
Lateral Overgrowth ◽  
Flat Film ◽  
The Difference ◽  
Kinetics Of

ABSTRACTThe kinetics of Ge lateral overgrowth on SiO2 with line-shaped Si seeds is examined. The growth process is described by the difference between the growth rates of Ge on (100) planes (GR100) and <311> facets (GR311). The theoretical calculations well reproduce the growth kinetics. It is shown that narrowing the line-seeds helps Ge coalescence and flat film formation.

Adsorption Kinetics of a Hydrophobic−Hydrophilic Diblock Polyelectrolyte at the Solid−Aqueous Solution Interface:  A Slow Birth and Fast Growth Process

2000 ◽  
Vol 33 (16) ◽  
pp. 6051-6059 ◽  
Author(s):  
T. Abraham ◽  
S. Giasson ◽  
J. F. Gohy ◽  
R. Jérôme ◽  
B. Müller ◽  
...  
Keyword(s):  
Aqueous Solution ◽  
Adsorption Kinetics ◽  
Growth Process ◽  
Fast Growth ◽  
Solution Interface ◽  
Kinetics Of

Growth kinetics of thin silicon dioxide in a controlled ambient oxidation system

1984 ◽  
Vol 44 (6) ◽  
pp. 626-628 ◽  
Author(s):  
K. K. Ng ◽  
W. J. Polito ◽  
J. R. Ligenza
Keyword(s):  
Silicon Dioxide ◽  
Growth Kinetics ◽  
Thin Silicon ◽  
Kinetics Of ◽  
Oxidation System
Sign in / Sign up

Export Citation Format

Share Document